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2SD882P

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size267KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric Compare View All

2SD882P Overview

Transistor

2SD882P Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Base Number Matches1
2SD882
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
PNP Type
Epitaxl Planar Transistors
TO-92
D
E
S1
Description
The 2SD882 is suited for the output stage of 0.75W audio,
voltage requlator, and relay driver.
A
b1
S E A T IN G
PLANE
L
e1
e
b
C
REF.
A
S
1
b
b
1
C
Min.
4.45
1.02
0.36
0.36
0.36
Millimeter
Max.
4.7
-
0.51
0.76
0.51
REF.
D
E
L
e1
e
Min.
4.44
3.30
12.70
1.150
2.42
Millimeter
Max.
4.7
3.81
-
1.390
2.66
Absolute Maximum Ratings at Ta=25
o
C
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage at Ta=25 :
Collector to Emitter Voltage at Ta=25 :
Emitter to Base Voltage at Ta=25 :
Collector Current at Ta=25 :
Total Power Dissipation at Ta=25 :
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Rattings
+150
-55 ~ +150
40
30
5.0
3.0
750
Unit
V
V
V
A
mW
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
FT
Cob
at Ta = 25 :
Min.
40
30
5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-
-
-
-
90
45
Max.
-
-
-
1
1
0.5
2
-
500
-
-
MHz
Pf
Unit
V
V
V
uA
uA
V
V
IC=100uA ,IE=0
IC=1mA,IB=0
IE=10uA
VCB=30V
VEB=3V
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=20mA
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V,IE=0, f=1MHz
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
Test Conditions
Classification Of h
FE
2
Rank
Range
Q
100-200
P
160-320
E
250-500
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of
2

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