UNISONIC TECHNOLOGIES CO., LTD
2SB1151
LOW COLLECTOR
SATURATION VOLTAGE
LARGE CURRENT
FEATURES
*High Power Dissipation
*Complementary to 2SD1691
PNP SILICON TRANSISTOR
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SB1151L-x-AA3-T
2SB1151G-x-AA3-T
2SB1151L-x-T60-K
2SB1151G-x-T60-K
2SB1151L-x-TN3-R
2SB1151G-x-TN3-R
Package
SOT-223
TO-126
TO-252
Pin Assignment
1
2
3
E
C
B
E
C
B
B
C
E
Packing
Tape Reel
Bulk
Tape Reel
2SB1511L-x-AA3-R
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) K: Bulk, R: Tape Reel
(2) AA3: SOT-223, T60: TO-126, TN3: TO-252
(3) x: refer to Classification of h
FE2
(4) G: Halogen Free, L: Lead Free
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Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R204-022.C
2SB1151
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
PNP SILICON TRANSISTOR
RATINGS
UNIT
-60
V
-60
V
-7
V
DC
-5
A
Collector Current
Pulse(Note 2)
-8
A
Base Current
-1
A
SOT-223
1
W
P
D
TO-126
1.5
W
Power Dissipation (Ta=25°C)
2
W
TO-252
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.PW≤10ms, Duty Cycle≤50%
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
V
BE(SAT)
h
FE 1
h
FE 2
h
FE 3
t
ON
t
STG
t
F
TEST CONDITIONS
I
C
=-100uA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100uA, Ic=0
V
CB
=-50V, I
E
=0
V
EB
=-7V, I
C
=0
I
C
=-2A, I
B
=-0.2A
I
C
=-2A, I
B
=-0.2A
V
CE
=-1V, I
C
=-0.1A
V
CE
=-1V, I
C
=-2A
V
CE
=-2V, I
C
=-5A
MIN
-60
-60
-7
TYP MAX UNIT
V
V
V
-10
µA
-10
µA
-0.14 -0.3
V
-.0.9 -1.2
V
400
60
160
50
0.15
0.78
0.18
Turn On Time
Switching Time
Storage Time
Fall Time
1
2.5
1
µS
µS
µS
Pulse test : PW≤350 µS, Duty Cycle≤2% Pulse
CLASSIFICATION OF h
FE2
RANK
RANGE
O
160 ~ 320
Y
200 ~ 400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R204-022.C
Collector Current, I
C
（A）
Collector Current, I
C
（A）
Power Dissipation, P
D
(W)
2SB1151
I
B
=
-20
D
2m
10 s*
ms
20
*
0m
s
0m
A
is
d
ite
m
Li
n ted
tio m i
pa Li
si /b
S
TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
D
si
is
pa
tio
n
Li
m
ite
d
UNISONIC TECHNOLOGIES CO., LTD
V
CEO( MAX)
www.unisonic.com.tw
Collector Current, I
C
（A）
I
C
Derating, d
T
(%)
DC Current Gain, h
FE
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QW-R204-022.C
2SB1151
TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
Staturation Voltage, V
BE(SAT),
V
CE(SAT)
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R204-022.C
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