2SJ559-A datasheet, PDF - EEWORLD Datasheet

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2SJ559-A: Description100mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET; CategoryDiscrete semiconductor The transistor; File Size50KB，8 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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2SJ559-A Overview

100mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

2SJ559-A Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	0.1 A
Maximum drain current (ID)	0.1 A
Maximum drain-source on-resistance	23 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G3
JESD-609 code	e6
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Bismuth (Sn98Bi2)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ559

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR HIGH SPEED SWITCHING

DESCRIPTION

The 2SJ559 is a switching device which can be driven directly

by a 2.5 V power source.

The 2SJ559 has excellent switching characteristics, and is

suitable for use as a high-speed switching device in digital

circuits.

PACKAGE DRAWING (Unit : mm)

0.3 ± 0.05

0.1

+0.1

–0.05

1.6 ± 0.1

0.8 ± 0.1

0 to 0.1

0.2

0.5

+0.1

–0

FEATURES

•

Can be driven by a 2.5 V power source.

•

Low gate cut-off voltage.

0.5

0.6

0.75 ± 0.05

1.0

1.6 ± 0.1

ABSOLUTE MAXIMUM RATINGS (T

= 25°C)

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse)

Note1

Note2

DSS

GSS

D(DC)

D(pulse)

stg

–30

°C

EQUIVALENT CIRCUIT

Drain

0.1

0.4

200

150

–55 to +150

Total Power Dissipation

Channel Temperature

Storage Temperature

Gate

Gate Protect

Diode

Source

Internal Diode

Notes 1.

≤

s, Duty Cycle

≤

1 %

Mounted on ceramic substrate of 3.0cm

Remark

0.64 mm

Marking : C1

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

D13801EJ1V0DS00 (1st edition)

Date Published June 1999 NS CP(K)

Printed in Japan

1999

2SJ559-A Related Products

	2SJ559-A
Description	100mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	0.1 A
Maximum drain current (ID)	0.1 A
Maximum drain-source on-resistance	23 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G3
JESD-609 code	e6
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Bismuth (Sn98Bi2)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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