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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ559
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SJ559 is a switching device which can be driven directly by a
2.5 V power source.
The 2SJ559 has excellent switching characteristics, and is suitable
for use as a high-speed switching device in digital circuits.
1.6 ± 0.1
0.8 ± 0.1
PACKAGE DRAWING (Unit: mm)
0.3
+0.1
–0
0.15
+0.1
–0.05
3
0 to 0.1
2
0.2
+0.1
–0
0.5
0.5
0.6
0.75 ± 0.05
1
FEATURES
•
Can be driven by a 2.5 V power source.
•
Low gate cut-off voltage.
ORDERING INFORMATION
PART NUMBER
2SJ559
PACKAGE
SC-75 (USM)
1.0
1.6 ± 0.1
Marking: C1
1: Source
2: Gate
3: Drain
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation
Note2
Channel Temperature
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
−30
m20
m0.1
m0.4
200
150
V
V
A
A
mW
°C
°C
EQUIVALENT CIRCUIT
Drain
Gate
Gate
Protection
Diode
Body
Diode
−55
to +150
Storage Temperature
T
stg
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2
2.
Mounted on ceramic substrate of 3.0 cm x 0.64 mm
Remark
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13801EJ2V0DS00 (2nd edition)
Date Published November 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
1999
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