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TSDF1250RW

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size123KB,6 Pages
ManufacturerVishay Telefunken (Vishay)
Websitehttp://www.vishay.com
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TSDF1250RW Overview

Transistor,

TSDF1250RW Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay Telefunken (Vishay)
Reach Compliance Codeunknown
Maximum collector current (IC)0.06 A
ConfigurationSingle
Minimum DC current gain (hFE)50
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)

TSDF1250RW Preview

TSDF1250/TSDF1250R/TSDF1250W/TSDF1250RW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise applicatins such as power amplifiers,
mixers and oscillators in analogue and digital TV–sys-
tems (e.g. satellite tuners) up to microwave
frequencies.
Features
D
Low power applications
D
Very low noise figure
2
1
D
High transition frequency f
T
= 12 GHz
D
Excellent large signal behaviour
1
2
94 9279
13 579
94 9278
95 10831
3
4
4
3
TSDF1250 Marking: F50
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
TSDF1250R Marking: 50F
Plastic case (SOT 143R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
2
1
1
2
13 653
13 566
13 654
13 566
3
4
4
3
TSDF1250W Marking: WF5
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
TSDF1250RW Marking: W5F
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
9
6
2
60
200
150
–65 to +150
Unit
V
V
V
mA
mW
°
C
°
C
T
amb
60
°
C
Document Number 85067
Rev. 5, 08-Jul-99
www.vishay.com
1 (6)
TSDF1250/TSDF1250R/TSDF1250W/TSDF1250RW
Vishay Telefunken
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35 m Cu
Symbol
R
thJA
Value
450
Unit
K/W
m
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
V
CE
= 12 V, V
BE
= 0
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
I
C
= 1 mA, I
B
= 0
I
C
= 50 mA, I
B
= 5 mA
V
CE
= 5 V, I
C
= 40 mA
Symbol Min Typ Max Unit
I
CES
100
A
I
CBO
100 nA
I
EBO
2
A
V
(BR)CEO
6
V
V
CEsat
0.1 0.5
V
h
FE
50 100 150
m
m
Electrical AC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Test Conditions
V
CE
= 5 V, I
C
= 40 mA, f = 1 GHz
V
CB
= 1 V, f = 1 MHz
V
CE
= 1 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 5 V, I
C
= 5 mA,
Z
S
= Z
Sopt
, Z
L
= 50 , f = 2 GHz
V
CE
= 5 V, I
C
= 5 mA,
f = 2 GHz (@F
opt
)
V
CE
= 5 V, I
C
= 40 mA,
Z
S
= Z
Sopt
, Z
L
= 50 , f = 2 GHz
V
CE
= 5 V, I
C
= 40 mA,
Z
0
= 50 , f = 2 GHz
V
CE
= 5 V, I
C
= 40 mA, f = 2 GHz
Symbol
f
T
C
cb
C
ce
C
eb
F
G
pe
G
pe
S
21e
2
IP
3
Min
Typ
12
0.6
0.3
0.7
1.2
11
13.5
12.5
28
Max
Unit
GHz
pF
pF
pF
dB
dB
dB
dB
dBm
W
W
Transducer gain
Third order intercept point at
output
W
www.vishay.com
2 (6)
Document Number 85067
Rev. 5, 08-Jul-99
TSDF1250/TSDF1250R/TSDF1250W/TSDF1250RW
Vishay Telefunken
Typical Characteristics
(T
amb
= 25°C unless otherwise specified)
C
cb
– Collector Base Capacitance ( pF )
300
P
tot
– Total Power Dissipation ( mW )
250
200
150
100
50
0
0
96 12159
1.0
f= 1MHz
0.8
0.6
0.4
0.2
0
0
2
4
6
8
10
V
CB
– Collector Base Voltage ( V )
20
40
60
80
100 120 140 160
16131
T
amb
– Ambient Temperature (
°C
)
Figure 1. Total Power Dissipation vs.
Ambient Temperature
20
f
T
– Transition Frequency ( GHz )
f = 1GHz
F – Noise Figure ( dB )
16
12
8
4
0
0
16130
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
3.0
V
CE
= 5V
2.5
2.0
1.5
1.0
0.5
0
V
CE
= 5V
f = 2GHz
Z
S
= 50Ω
V
CE
= 2V
10
20
30
40
50
16132
0
5
10
15
20
25
30
I
C
– Collector Current ( mA )
I
C
– Collector Current ( mA )
Figure 2. Transition Frequency vs. Collector Current
Figure 4. Noise Figure vs. Collector Current
Document Number 85067
Rev. 5, 08-Jul-99
www.vishay.com
3 (6)
TSDF1250/TSDF1250R/TSDF1250W/TSDF1250RW
Vishay Telefunken
Dimensions of TSDF1250 in mm
96 12240
Dimensions of TSDF1250R in mm
96 12239
www.vishay.com
4 (6)
Document Number 85067
Rev. 5, 08-Jul-99
TSDF1250/TSDF1250R/TSDF1250W/TSDF1250RW
Vishay Telefunken
Dimensions of TSDF1250W in mm
96 12237
Dimensions of TSDF1250RW in mm
96 12238
Document Number 85067
Rev. 5, 08-Jul-99
www.vishay.com
5 (6)

TSDF1250RW Related Products

TSDF1250RW TSDF1250R TSDF1250 TSDF1250W
Description Transistor, Transistor, Transistor, Transistor,
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker Vishay Telefunken (Vishay) Vishay Telefunken (Vishay) Vishay Telefunken (Vishay) Vishay Telefunken (Vishay)
Reach Compliance Code unknown unknown unknown unknown
Maximum collector current (IC) 0.06 A 0.06 A 0.06 A 0.06 A
Configuration Single Single Single Single
Minimum DC current gain (hFE) 50 50 50 50
JESD-609 code e0 e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W 0.2 W
surface mount YES YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)

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