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2SK3457-S17-AY

Description
2SK3457-S17-AY
CategoryDiscrete semiconductor    The transistor   
File Size239KB,10 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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2SK3457-S17-AY Overview

2SK3457-S17-AY

2SK3457-S17-AY Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it Rohs certified?conform to
Parts packaging codeMP-45F
package instruction,
Contacts3
Manufacturer packaging codePRSS0003AK-A3
Reach Compliance Codecompli
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.

2SK3457-S17-AY Related Products

2SK3457-S17-AY 2SK3457-AZ 2SK3457
Description 2SK3457-S17-AY 2SK3457-AZ 5A, 800V, 2.2ohm, N-CHANNEL, Si, POWER, MOSFET, MP-45F, ISOLATED TO-220, 3 PIN
Is it Rohs certified? conform to conform to incompatible
Parts packaging code MP-45F MP-45F SFM
package instruction , FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3
Reach Compliance Code compli compli unknow
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260 NOT SPECIFIED
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1
Brand Name Renesas Renesas -
Manufacturer packaging code PRSS0003AK-A3 PRSS0003AK-A3 -
Other features - AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) - 73.8 mJ 73.8 mJ
Shell connection - ISOLATED ISOLATED
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 800 V 800 V
Maximum drain current (Abs) (ID) - 5 A 5 A
Maximum drain current (ID) - 5 A 5 A
Maximum drain-source on-resistance - 2.2 Ω 2.2 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code - R-PSFM-T3 R-PSFM-T3
Number of components - 1 1
Number of terminals - 3 3
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - FLANGE MOUNT FLANGE MOUNT
Polarity/channel type - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) - 40 W 40 W
Maximum pulsed drain current (IDM) - 20 A 20 A
Certification status - Not Qualified Not Qualified
surface mount - NO NO
Terminal form - THROUGH-HOLE THROUGH-HOLE
Terminal location - SINGLE SINGLE
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON

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