DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ243
P-CHANNEL MOS FET
FOR SWITCHING
The 2SJ243 is a P-channel vertical type MOS FET that is driven
at 2.5 V.
Because this MOS FET can be driven on a low voltage and
because it is not necessary to consider the drive current, the
2SJ243 is ideal for driving the actuator of power-saving systems,
1.6 ± 0.1
PACKAGE DIMENSIONS (in mm)
0.3 ± 0.05
0.1
+0.1
–0.05
Moreover, the 2SJ243 is housed in a super small mini-mold
package so that it can help increase the mounting density on the
printed circuit board and lower the mounting cost, contributing to
miniaturization of the application systems.
0.8 ± 0.1
such as VCR cameras and headphone stereo systems.
D
0 to 0.1
G
0.2
+0.1
–0
0.5
0.5
0.6
0.75 ± 0.05
S
FEATURES
• Small mounting area: about 60 % of the conventional mini-mold
package (SC-70)
• Can be directly driven by 3-V IC
• Can be automatically mounted
1.0
1.6 ± 0.1
EQUIVALENT CIRCUIT
Drain (D)
The internal diode in the right figure is a parasitic diode.
The protection diode is to protect the product from damage
due to static electricity. If there is a danger that an extremely
high voltage will be applied across the gate and source in the
actual circuit, a gate protection circuit such as an external
constant-voltage diode is necessary.
Gate (G)
Gate protection
diode
Source (S)
Internal diode
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: A1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
PW
≤
10 ms
Duty cycle
≤
50 %
Total Power Dissipation
Channel Temperature
Operating Temperature
Storage Temperature
P
T
T
ch
T
opt
T
stg
3.0 cm
2
×
0.64 mm, ceramic substrate used
200
150
–55 to +80
–55 to +150
mW
˚C
˚C
˚C
V
GS
= 0
V
DS
= 0
TEST CONDITIONS
RATING
–30
±7
±100
±200
UNIT
V
A
mA
mA
Document No. D11215EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996
2SJ243
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
PARAMETER
Drain Cut-Off Current
Gate Leakage Current
Gate Cut-Off Voltage
Forward Transfer Admittance
Drain to Source On-State Resistance
Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
I
DSS
I
GSS
V
GS(off)
|y
fs
|
R
DS(on)1
R
DS(on)2
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= –5V, I
D
= –10 mA
V
GS(on)
= –5 V, R
G
= 10
Ω
R
L
= 500
Ω
TEST CONDITIONS
V
DS
= –30 V, V
GS
= 0
V
GS
=
±5
V, V
DS
= 0
V
DS
= –3 V, I
D
= –10
µ
A
V
DS
= –3 V, I
D
= 10 mA
V
GS
= –2.5 V, I
D
= –1 mA
V
GS
= –4.0 V, I
D
= –10 mA
V
DS
= –5.0 V, V
GS
= 0, f = 1 MHz
–1.6
20
±0.1
–1.9
30
55
20
16
13
2
10
40
130
80
100
25
MIN.
TYP.
MAX.
–1.0
±3.0
–2.3
UNIT
µ
A
µ
A
V
mS
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (Resistive Load)
V
GS
DUT
R
L
Gate
Voltage
Waveform
I
D
t
d(on)
Drain
Current
Waveform
0
V
GS
τ
τ
= 1
µ
s
Duty cycle
≤
1 %
t
r
t
d(off)
t
f
10 %
V
GS(on)
90 %
V
DD
R
G
PG.
0
10 %
I
D
10 %
90 %
90 %
2
2SJ243
TYPICAL CHARACTERISTICS (T
A
= 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
240
P
T
- Total Power Dissipation - mW
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
3.0 cm
2
×
0.64 mm
Using ceramic substrate
100
dT - Derating Factor - %
200
160
120
80
40
80
60
40
20
0
20
40
60
80
100 120 140 160
0
30
T
C
- Case Temperature - ˚C
60
90
120 150 180
T
A
- Ambient Temperature - ˚C
210
TRANSFER CHARACTERISTICS
V
DS
= –3 V
Pulsed
–10
I
D
- Drain Current - mA
| y
fs
| - Forward Transfer Admittance - mS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
400
T
A
= 75 ˚C
100
–25 ˚C
30
150 ˚C
10
25 ˚C
V
DS
= –3 V
Pulsed
–100
150 ˚C
T
A
= –25 ˚C
25 ˚C
–1
–0.1
75 ˚C
–0.01
3
–0.001
–1.0
–1.5
–2.0
–2.5
–3.0 –3.5
V
GS
- Gate to Source Voltage - V
–4.0
1
–0.5 –1.0
–3.0
–10
–30
I
D
- Drain Current - mA
–100 –200
R
DS(on)
- Drain to Source On-State Resistance -
Ω
R
DS(on)
- Drain to Source On-State Resistance -
Ω
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
Pulsed
30
I
D
= –0.1 A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
120
V
GS
= –2.5 V
Pulsed
100
75 ˚C
80
T
A
= –25 ˚C
60
25 ˚C
150 ˚C
20
I
D
= –10 mA
10
40
0
–1
–2 –3
–4
–5
–6 –7
V
GS
- Gate to Source Voltage - V
–8
20
–0.3
–0.6
–1
–2
–5
I
D
- Drain Current - mA
–10
3
2SJ243
R
DS(on)
- Drain to Source On-State Resistance -
Ω
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
130
V
GS
= –4 V
Pulsed
100
60
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
V
DS
= –5 V
f = 1 MHz
C
iss
10
C
oss
3
C
rss
1
0.5
–0.3
C
iss
, C
oss
, C
rss
- Capacitance - pF
–60
30
50
75 ˚C
25 ˚C
T
A
= 150 ˚C
0
–0.5
–25 ˚C
–1
–3
–10
–30
–1
–3
–10
V
DS
- Gate to Source Voltage - V
–40
I
D
- Drain Current - mA
SWITCHING CHARACTERISTICS
500
–200
V
DD
= – 5 V
V
GS
= – 5 V
R
in
= 10
Ω
200
100
t
r
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–100
–30
–10
–3
–1
–0.3
–0.1
–0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0 –1.1 –1.2 –1.3
V
SD
- Source to Drain Voltage - V
V
GS
= 0
Pulsed
t
d(on)
, tr, t
d(off)
, t
f
- Switching Time - ns
50
t
f
t
d(on)
20
t
d(off)
10
–6
–10
–30 –50
–100
I
D
- Drain Current - mA
–300
4
I
SD
- Diode Forward Current - mA
2SJ243
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor devices
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
Document No.
TEI-1202
IEI-1209
C10535E
MEI-1202
X10679E
5
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