Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2688
DESCRIPTION
・With
TO-126 package
・High
breakdown voltage
・High
transition frequency
APPLICATIONS
・Designed
for use in Color TV chroma
output circuits.
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
固电
导½
半
PARAMETER
ANG
CH
IN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
300
300
5
0.2
UNIT
V
V
V
A
T
a
=25℃
P
C
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
1.25
W
10
150
-55~150
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC2688
TYP.
MAX
UNIT
V
CEsat
Collector-emitter saturation voltage
I
C
=50mA; I
B
=5mA
1.5
V
V
(BR)CEO
I
CBO
Collector-emitter breakdown voltage
I
C
=1mA; I
B
=0
V
CB
=200V; I
E
=0
300
V
μA
μA
Collector cut-off current
0.1
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
0.1
h
FE
DC current gain
I
C
=10mA ; V
CE
=10V
40
250
f
T
Transition frequency
I
C
=10mA ; V
CE
=30V
40
MHz
C
re
Feedback capacitance
I
E
=0 ; V
CB
=10V;f=1MHz
h
FE
Classifications
N
固电
M
导½
半
L
100-200
K
40-80
ANG
CH
IN
60-120
160-250
MIC
E SE
OR
CT
NDU
O
3.0
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2688
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 Outline dimensions
3
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