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BYV54V50

Description
Diode,
CategoryDiscrete semiconductor    diode   
File Size354KB,7 Pages
ManufacturerNorth American Philips Discrete Products Div
Download Datasheet Parametric Compare View All

BYV54V50 Overview

Diode,

BYV54V50 Parametric

Parameter NameAttribute value
MakerNorth American Philips Discrete Products Div
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum forward voltage (VF)1.2 V
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum repetitive peak reverse voltage50 V
Maximum reverse current200 µA
Maximum reverse recovery time0.06 µs
Reverse test voltage50 V
surface mountNO

BYV54V50 Related Products

BYV54V50 BYV54V200 BYV54V100
Description Diode, Diode, Diode,
Maker North American Philips Discrete Products Div North American Philips Discrete Products Div North American Philips Discrete Products Div
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Maximum forward voltage (VF) 1.2 V 1.2 V 1.2 V
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Maximum repetitive peak reverse voltage 50 V 200 V 100 V
Maximum reverse current 200 µA 200 µA 200 µA
Maximum reverse recovery time 0.06 µs 0.06 µs 0.06 µs
Reverse test voltage 50 V 200 V 100 V
surface mount NO NO NO

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