Diode,
| Parameter Name | Attribute value |
| Maker | Philips Semiconductors (NXP Semiconductors N.V.) |
| Reach Compliance Code | unknown |
| Maximum forward voltage (VF) | 1.2 V |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -40 °C |
| Maximum repetitive peak reverse voltage | 50 V |
| Maximum reverse current | 200 µA |
| Maximum reverse recovery time | 0.06 µs |
| Reverse test voltage | 50 V |
| surface mount | NO |
| BYV54V50 | BYV54-200 | BYV54V150 | BYV54V100 | |
|---|---|---|---|---|
| Description | Diode, | Diode | Diode, | Diode, |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| Maximum forward voltage (VF) | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Minimum operating temperature | -40 °C | -40 °C | -40 °C | -40 °C |
| Maximum repetitive peak reverse voltage | 50 V | 200 V | 150 V | 100 V |
| Maximum reverse current | 200 µA | 200 µA | 200 µA | 200 µA |
| Maximum reverse recovery time | 0.06 µs | 0.06 µs | 0.06 µs | 0.06 µs |
| Reverse test voltage | 50 V | 200 V | 150 V | 100 V |
| surface mount | NO | NO | NO | NO |