FMMT491A datasheet, PDF - EEWORLD Datasheet

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FMMT491A: Description1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size114KB，2 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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FMMT491A Overview

1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR

FMMT491A Parametric

Parameter Name	Attribute value
Maximum collector current	1 A
Maximum Collector-Emitter Voltage	40 V
Number of terminals	3
Processing package description	SOT-23, 3 PIN
each_compli	Yes
EU RoHS regulations	Yes
state	Active
structure	SINGLE
Minimum DC amplification factor	35
jesd_30_code	R-PDSO-G3
jesd_609_code	e3
moisture_sensitivity_level	1
Number of components	1
Maximum operating temperature	150 Cel
Packaging Materials	PLASTIC/EPOXY
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
eak_reflow_temperature__cel_	260
larity_channel_type	NPN
wer_dissipation_max__abs_	0.5000 W
qualification_status	COMMERCIAL
sub_category	Other Transistors
surface mount	YES
terminal coating	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
ime_peak_reflow_temperature_max__s_	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Rated crossover frequency	150 MHz

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FMMT491A

E

ISSUE 3 OCTOBER 1995

FEATURES

* Very Low Equivalent Resistance,

R

CE(sat)

195mΩ at 1A

C

SOT23 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

TYPICAL CHARACTERISTICS

I

+

/I

*

=10

0.5

+25°C

0.5

B

0.4

-55° C

+25° C

+100° C

0.4

COMPLEMENTARY TYPE

PARTMARKING DETAIL

FMMT591A

41A

0.3

0.2

I

+

/I

*

=10

I

+

/I

*

=50

I

+

/I

*

=100

0.3

0.2

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

V

CBO

V

CEO

V

EBO

I

C

I

CM

P

tot

T

j

:T

stg

SYMBOL

V

(BR)CBO

V

CEO(sus)

V

(BR)EBO

I

CBO

,I

CES

Cut-Off Currents

Emitter Cut-Off Current

Saturation Voltages

I

EBO

V

CE(sat)

V

BE(sat)

Base Emitter Turn On Voltage

V

BE(on)

Static Forward Current

Transfer Ratio

100V

0.1

0

1mA

10mA

10A

100mA

1A

0.1

SYMBOL

VALUE

40

5

1

2

500

-55 to +150

UNIT

V

A

mW

°C

0

1mA

10mA

100mA

1A

10A

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

Collector-Base

Breakdown Voltage

MIN.

40

5

I

C

-Collector Current

I

C

-Collector Current

V

CE(sat)

C

CE(sat)

vI

I

+

/I

*

=10

C

V

vI

1000

-55° C

+25°C

+100°C

V

+-

=5V

1.4

800

1.2

+100°C

1.0

600

+25°C

0.8

400

0.6

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

MAX.

UNIT

V

100

0.3

0.5

1.1

1.0

h

FE

900

nA

V

CONDITIONS.

I

C

=100

µ

A

I

C

=10mA*

I

E

=100

µ

A

V

CB

=30V,V

CES

=30V

V

EB

=4V

I

C

=500mA, I

B

=50mA*

I

C

=1A, I

B

=100mA*

I

C

=1A, I

B

=100mA*

I

C

=1A, V

CE

=5V*

-55° C

200

1mA

10A

10mA

100mA

1A

0.4

0.2

0

1mA

10mA

100mA

1A

10A

0

I

C

-Collector Current

I

C

-Collector Current

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

h vI

BE(sat)

C

FE

C

V

vI

1.0

1

V

+-

=5V

10

0.8

0.6

DC

1s

100ms

10ms

1ms

100us

-55°C

0.4

+25°C

0.1

+100°C

0.2

1V

10V

0.01

0

1mA

10mA

100mA

1A

10A

0.001

0.1V

I

C

-Collector Current

V

CE

- Collector Emitter Voltage (V)

V

BE(on)

vI

C

Safe Operating Area

300

200

35

Transition Frequency

Collector-Base

Breakdown Voltage

f

T

C

obo

150

I

C

=1mA, V

CE

=5V*

I

C

=500mA, V

CE

=5V*

I

C

=1A, V

CE

=5V*

I

C

=2A, V

CE

=5V*

MHz

10

pF

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

Spice parameter data is available upon request for this device

3 - 117

I

C

=50mA, V

CE

=10V

f=100MHz

V

CB

=10V, f=1MHz

3 - 118

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