TM6345PM datasheet, PDF - EEWORLD Datasheet

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TM6345PM: Description10MHz - 1100MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, T4, TO-8, 4 PIN; CategoryWireless rf/communication Radio frequency and microwave; File Size100KB，1 Pages; ManufacturerSpectrum Microwave

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TM6345PM Overview

10MHz - 1100MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, T4, TO-8, 4 PIN

TM6345PM Parametric

Parameter Name	Attribute value
Maker	Spectrum Microwave
Reach Compliance Code	unknown
Other features	I/P POWER-MAX (PEAK)=27DBM
structure	COMPONENT
Gain	10.5 dB
Maximum input power (CW)	13 dBm
Maximum operating frequency	1100 MHz
Minimum operating frequency	10 MHz
Maximum operating temperature	85 °C
Minimum operating temperature	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	2

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RF AMPLIFIER

MODEL

TM6345PM

Features

Superior Phase Noise Performance

Output Power: +17 dBm Typical

Low Noise Figure: 2.5 dB Typical

Operating Temp. - 55 ºC

to +85

ºC

Environmental Screening Available

Available as:

TM6345PM, 4 Pin TO-8 (T4)

TN6345PM, 4 Pin Surface Mount (SM3)

FP6345PM, 4 Pin Flatpack (FP4)

BX6345PM, Connectorized Housing (H1)

Typical Intermodulation Performance at 25 º C

Second Order Harmonic Intercept Point ...... +54 dBm (Typ.)

Second Order Two Tone Intercept Point ....... +46 dBm (Typ.)

Third Order Two Tone Intercept Point ........... +33 dBm (Typ.)

Maximum Ratings

MIN/MAX

Ta = -55 ºC to +85 ºC

10-1100 MHz

10.5

+15.0 Min.

- 12 Max.

2.0:1 Max.

4.0 Max.

+15

48 Max.

Specifications

CHARACTERISTIC

Frequency (MHz)

Gain (dB)

Power @ 1 dB

Comp. (dBm)

Reverse

Isolation (dB)

VSWR

Out

Noise figure (dB)

Power

Vdc

TYPICAL

Ta= 25 ºC

10-1100 MHz

12.3

+17.0

- 13.5

1.5:1

1.75:1

<3.0

+15

Ambient Operating Temperature .............. -55ºC to + 100 ºC

Storage Temperature ............................... -62ºC to + 125 ºC

Case Temperature ................................................. + 125 ºC

DC Voltage ......................................................... + 18 Volts

Continuous RF Input Power ................................. + 13 dBm

Short Term RF Input Power ............. 50 mW (1 Minute Max.)

Maximum Peak Power .................... 0.5 Watt (3

µsec

Max.)

Guaranteed Phase Noise Performance

(dBc/Hz)

Frequency

100 Hz

1 kHz

10 kHz

100 kHz

1 MHz

Typical

-160

-172

-175

Guarantee (min.)

-156

-168

-170

-172

Note: Care should always be taken to effectively ground the case of each unit.

Typical Performance Data

Gain (dB)

Reverse Isolation (dB)

Phase Noise (dBc/Hz)

1 dB Comp. (dBm)

Noise Figure (dB)

Input VSWR

Output VSWR

Residual Phase Noise Test Conditions:

Carrier Frequency: 600 MHz

Power Output +17.0 dBm

Temperature: 25

Agilent ES5500 System

Legend

+ 25 ºC

+ 85 ºC - - - - - - -55 ºC

2707 Black Lake Place, Philadelphia, PA 19154

TEL 215-464-4000

· · · ·

FAX 215-464-4001

3/31/04

TM6345PM Related Products

	TM6345PM	TN6345PM	BX6345PM	FP6345PM
Description	10MHz - 1100MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, T4, TO-8, 4 PIN	10 MHz - 1100 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, SM3, 4 PIN	10 MHz - 1100 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, H1	10 MHz - 1100 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, FP-4
Maker	Spectrum Microwave	Spectrum Microwave	Spectrum Microwave	Spectrum Microwave
Reach Compliance Code	unknown	unknown	unknown	unknown
Other features	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM
structure	COMPONENT	COMPONENT	COAXIAL	COMPONENT
Gain	10.5 dB	10.5 dB	10.5 dB	10.5 dB
Maximum input power (CW)	13 dBm	13 dBm	13 dBm	13 dBm
Maximum operating frequency	1100 MHz	1100 MHz	1100 MHz	1100 MHz
Minimum operating frequency	10 MHz	10 MHz	10 MHz	10 MHz
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	2	2	2	2

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