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2SD1001EL-T1

Description
300mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD, SC-62, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size209KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

2SD1001EL-T1 Overview

300mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD, SC-62, 3 PIN

2SD1001EL-T1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeSC-62
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.3 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)135
JESD-30 codeR-PSSO-F3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)140 MHz
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