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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ324,324-Z
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ324 is P-channel MOS Field Effect Transistor designed for
solenoid, motor and lamp driver.
PACKAGE DRAWINGS (Unit: mm)
1.5
−0.1
+0.2
6.5 ±0.2
5.0 ±0.2
1.6 ±0.2
2.3 ±0.2
0.5 ±0.1
FEATURES
• Low On-state Resistance
R
DS(on)
= 0.18
Ω
TYP. (V
GS
=
−10
V, I
D
=
−1.0
A)
R
DS(on)
= 0.36
Ω
TYP. (V
GS
=
−4
V, I
D
=
−0.8
A)
• Low C
iss
: C
iss
= 330 pF TYP.
• Built-in G-S Gate Protection Diode
4
5.5 ±0.2
7.0 MIN.
13.7 MIN.
+0.2
1
2
3
1.1 ±0.2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage (AC)
Gate to Source Voltage (DC)
Drain Current (DC)
Drain Current (pulse)
Note
0.5
−0.1
V
V
V
A
A
0.5
−0.1
+0.2
V
DSS
V
GSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
−30
m20
−20,
+10
m2.0
m8.0
20
1.0
150
−55
to +150
2.3 2.3
0.75
<R>
TO-251 (MP-3)
5.0 ±0.2
4.4 ±0.2
4
5.5 ±0.2
1.5
−0.1
+0.2
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
W
W
°C
°C
6.5 ±0.2
2.3 ±0.2
0.5 ±0.1
Note
1.0 ±0.5
0.4 MIN.
0.5 TYP.
2.5 ±0.5
Note
5.6 ±0.3
9.5 ±0.5
1 2 3
Note
PW
≤
10
μ
s, Duty Cycle
≤
1%
0.5 ±0.1
0.5 ±0.1
2.3 ±0.3
2.3 ±0.3
0.15 ±0.15
EQUIVALENT CIRCUIT
TO-252 (MP-3Z)
Electrode Connection
1. Gate
2. Drain
3. Source
4. Drain Fin
Note
The depth of notch at the top of the fin is
from 0 to 0.2 mm.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18327EJ3V0DS00 (3rd edition)
Date Published January 2007 NS CP(K)
Printed in Japan
1993, 2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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