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1.
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“Standard”:
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
SILICON POWER TRANSISTOR
2SC2885, 2946, 2946(1)
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
The 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a small package (MP-3)
which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DC converters and switching
regulators.
There are three types of transistors selectable according to the reliability requirments: 2SC2946 and 2946(1) for industrial
use, 2SC2885 for general use. The 2SC2946(1) is produced with leads so as to enable mounting directly in a hybrid IC.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
Note
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
I
C(DC)
P
T
(T
C
= 25°C)
P
T
(T
A
= 25°C)
T
j
T
stg
330
200
7.0
2.0
4.0
1.0
15
600
150
−55
to +150
V
V
V
A
A
A
W
mW
°C
°C
Note
PW
≤
300
μ
s, Duty Cycle
≤
10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16135EJ3V0DS00 (3rd edition)
Date Published July 2006 NS CP(K)
Printed in Japan
2002
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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