2SC5053T100P datasheet, PDF - EEWORLD Datasheet

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2SC5053T100P: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon; CategoryDiscrete semiconductor The transistor; File Size98KB，3 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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2SC5053T100P Overview

Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

2SC5053T100P Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	82
JESD-30 code	R-PSSO-F3
JESD-609 code	e2
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power consumption environment	2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN COPPER
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
VCEsat-Max	0.4 V
Base Number Matches	1

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2SC5053T100P Related Products

	2SC5053T100P	2SC5053T100QR	2SC5053T100/QR	2SC5053T100/P	2SC5053T100PR	2SC5053T100PQ	2SC5053T100/PR	2SC5053T100/PQ
Description	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon	1A, 50V, NPN, Si, POWER TRANSISTOR	1A, 50V, NPN, Si, POWER TRANSISTOR	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon	1A, 50V, NPN, Si, POWER TRANSISTOR	1A, 50V, NPN, Si, POWER TRANSISTOR
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli	compli
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	1 A	1 A	1 A	1 A	1 A	1 A	1 A	1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	82	120	120	82	82	82	82	82
JESD-30 code	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3
JESD-609 code	e2	e2	e2	e2	e2	e2	e2	e2
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260	260	260
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
Terminal surface	TIN COPPER	TIN COPPER	TIN COPPER	TIN COPPER	TIN COPPER	TIN COPPER	TIN COPPER	TIN COPPER
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	10	10	10	10	10	10	10	10
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz
VCEsat-Max	0.4 V	0.4 V	0.4 V	0.4 V	0.4 V	0.4 V	0.4 V	0.4 V
Base Number Matches	1	1	1	1	1	1	1	1
transistor applications	SWITCHING	-	SWITCHING	SWITCHING	-	-	SWITCHING	SWITCHING

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