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NAND512R4A2DN6F

Description
Flash Memory
Categorystorage    storage   
File Size1MB,53 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric View All

NAND512R4A2DN6F Overview

Flash Memory

NAND512R4A2DN6F Parametric

Parameter NameAttribute value
MakerMicron Technology
package instruction,
Reach Compliance Codecompliant
NAND512xxA2D
NAND01GxxA2C
512-Mbit, 1-Gbit, 528-byte/264-word page,
1.8 V/3 V, SLC NAND flash memories
Features
High density SLC NAND flash memories
512-Mbit, 1-Gbit memory array
Cost effective solutions for mass
storage applications
TSOP48 12 x 20 mm (N)
NAND interface
x8 or x16 bus width
Multiplexed address/ data
Supply voltage: 1.8 V, 3 V
Page size
x8 device: (512 + 16 spare) bytes
x16 device: (256 + 8 spare) words
x8 device: (16 K + 512 spare) bytes
x16 device: (8 K + 256 spare) words
Random access:
12 µs (3 V)/15 µs (1.8 V) (max)
Sequential access:
30 ns (3 V)/50 ns (1.8 V) (min)
Page program time: 200 µs (typ)
FBGA
VFBGA63 9 x 11 x 1.05 mm (ZA)
Block size
Hardware data protection: program/erase
locked during power transitions
Security features
OTP area
Serial number (unique ID) option
100,000 program/erase cycles (with
ECC)
10 years data retention
Page read/program
Data integrity
Copy back program mode
Fast block erase: 1.5 ms (typ)
Status register
Electronic signature
Chip Enable ‘don’t care’
RoHS compliant packages
Development tools
Error correction code models
Bad blocks management and wear
leveling algorithms
Hardware simulation models
Table 1.
Device summary
NAND512xxA2D
NAND512R3A2D
NAND512R4A2D
NAND512W3A2D
NAND512W4A2D
NAND01GxxA2C
NAND01GR3A2C
NAND01GR4A2C
NAND01GW3A2C
NAND01GW4A2C
July 2009
Rev 6
1/53
www.numonyx.com
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