SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
FZTA42
C
ISSUE
3
–
SEPTEMBER 2007
7
ISSUE 2 NOVEMBER 93
FEATURES
* Suitable for video output stages in TV sets
and switch mode power supplies
* High breakdown voltage
E
C
B
COMPLIMENTARY TYPE FZTA92
PARTMARKING DETAIL DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
B
I
C
P
tot
T
j
:T
stg
SYMBOL
VALUE
300
300
5
100
500
2
-55 to +150
UNIT
V
V
V
mA
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Emitter Cut-Off Current I
EBO
V
CE(sat)
V
BE(sat)
Static Forward Current h
FE
Transfer Ratio
Transition
Frequency
Output Capacitance
f
T
C
obo
25
40
40
50
6
MHz
pF
* Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
For typical characteristics graphs see FMMTA42 datasheet.
3 - 302
MIN.
300
300
5
0.1
0.1
0.5
0.9
TYP.
MAX.
UNIT
V
V
V
µ
A
µ
A
CONDITIONS.
I
C
=100
µ
A, I
E
=0
I
C
=1mA, I
B
=0*
I
E
=100
µ
A, I
C
=0
V
CB
=200V, I
E
=0
V
EB
=5V, I
C
=0
V
V
I
C
=20mA, I
B
=2mA
I
C
=20mA, I
B
=2mA
I
C
=1mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V*
I
C
=30mA, V
CE
=10V*
I
C
=10mA, V
CE
=20V
f=20MHz
V
CB
=20V, f=1MHz
FZTA42
MPSA42
NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
MPSA42
TYPICAL CHARACTERISTICS
ISSUE 2 MARCH 94
FEATURES
* High voltage
160
V
CE
=20V
140
140
APPLICATIONS
* Telephone dialler circuit
C
B
E
120
120
V
CE
=10V
100
100
80
80
60
60
E-Line
TO92 Compatible
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
VALUE
300
300
6
500
680
-55 to +175
UNIT
V
V
V
mA
mW
°C
40
40
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
1.0
10
100
f
T
Transition Frequency (MHz)
20
20
h
FE
Static Forward Current Transfer Ratio
0.1
10
100
200
0
0.1
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
1.0
I
C
-Collector
Current (mA)
I
C
-Collector Current (mA)
h
FE
vs I
C
f
T
vs I
C
0.3
10ms
100ms
1ms
1A
Single Pulse Test at T
amb
=25°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V
CE(sat)
V
BE(sat)
Static Forward Current h
FE
Transfer Ratio
Transition
Frequency
Output Capacitance
f
T
C
obo
25
40
40
50
6
MHz
pF
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3-78
MIN.
300
300
6
0.1
Collector Cut-Off
Current
0.1
0.5
0.9
TYP.
MAX.
UNIT
V
V
V
µ
A
µ
A
0.2
0.1
CONDITIONS.
I
C
=100
µ
A, I
E
=0
I
C
=1mA, I
B
=0*
I
E
=100
µ
A, I
C
=0
V
CB
=200V, I
E
=0
V
EB
=6V, I
C
=0
V
V
I
C
=20mA, I
B
=2mA*
I
C
=20mA, I
B
=2mA*
I
C
=1mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V*
I
C
=30mA, V
CE
=10V*
I
C
=10mA, V
CE
=20V
f=20MHz
V
CB
=20V, f=1MHz
D.C.
0.1
I
C
/ I
B
=10
0.01
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
0
10
100
1000
I
C
-Collector Current Amps
0.1
1.0
10
100
200
0.001
1
I
C
-Collector Current (mA)
V
CE
-Collector-Emitter
Voltage (Volts)
Emitter-Base
Breakdown Voltage
V
CE
(sat) Collector-Emitter Saturation Voltage(Volts)
V
CE(sat)
vs I
C
Safe operating area
3-79
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