MMDT4403 datasheet, PDF - EEWORLD Datasheet

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MMDT4403: DescriptionDUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size115KB，3 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMDT4403 Overview

DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR

MMDT4403 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	ROHS COMPLIANT, PLASTIC PACKAGE-6
Contacts	6
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.6 A
Collector-emitter maximum voltage	40 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	20
JESD-30 code	R-PDSO-G6
Number of components	2
Number of terminals	6
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Maximum off time (toff)	255 ns
Maximum opening time (tons)	35 ns
Base Number Matches	1

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MMDT4403

DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE

FEATURES

• PNP epitaxial silicon, planar design

• Collector-emitter voltage V

= -40V

• Collector current I

= -600mA

• In compliance with EU RoHS 2002/95/EC directives

40 Volts

POWER

200 mWatts

MECHANICAL DATA

• Case: SOT-363, Plastic

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight: 0.006 gram

• Marking: M3A

Fig.53

ABSOLUTE RATINGS

PARAMETER

C ollector - Emi tter Voltage

C ollector - Base Voltage

Emi tter - Base Voltage

C ollector C urrent - C onti nuous

Symbol

CEO

CBO

EBO

Value

-40

-60

-6.0

-600

Uni ts

THERMAL CHARACTERISTICS

Parameter

Max Power Dissipation (Note 1)

Thermal Resistance , Junction to Ambient

Junction Temperature

Storage Temperature

Symbol

TOT

R

STG

Value

200

625

-55 to 150

Units

C/W

Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm.

REV.0.1-JUL.22.2009

PAGE . 1

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