PJSD03LCTS datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> PJSD03LCTS

Preview

PJSD03LCTS: DescriptionProtection Device TVS/ESD Arrays; CategoryDiscrete semiconductor; File Size86KB，3 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

Download Datasheet View All

PJSD03LCTS Overview

Protection Device TVS/ESD Arrays

Features

Product Name: Protection Device TVS/ESD Arrays

Product model: PJSD03LCTS

Product parameters:

Peak Power Dissipation 8x20μs PPPM ：120W

Reverse Stand-off Voltage VRWM： Max=3.3V

Reverse Leakage IR@VRWM ： Max=100μA

Max Clamping Voltage@8x20μs PPPM Vc@Ipp ：11V

Peak Pulse Current 8x20μs PPPM Ipp ：5A

Off-State Capacitance, 1MHz Zero dc Bias Co ：Max=3pF

Package：SOD-523

PJSD03LCTS Preview

Download Datasheet

View All

PJSD03LCTS~PJSD05LCTS

SINGLE LINE LOW CAPACITIANCE TVS DIODE FOR ESD PROTECTION

PORTABLE ELECTRONICS

VOLTAGE

FEATURES

• 120 Watts peak pules power( tp=8/20µs)

• Small package for use in portable electronics

• Suitable replacement for MLV’S in ESD protection applications

• Low clamping voltage and leakage current

• In compliance with EU RoHS 2002/95/EC directives

3~5 Volts

POWER

120 Watts

APPLICATIONS

• Case: SOD-523 plastic

• Terminals : Solderable per MIL-STD-750,Method 2026

• Approx Weight: 0.0014 grams

• Marking : PJSD03LCTS : PL

PJSD05LCTS : PM

Fig.139

MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS

ABSOLUTE MAXIMUM RATING

Rating

Peak Pulse Power (tp=8/20

ESD Voltage

Operating Temperature

Storage Temperature

Symbol

Value

120

-55 to 150

Units

ESD

STG

ELECTRICAL CHARA CTERISTICS

PJSD03LCTS

Parameter

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Clamping Voltage(8/20

Off State Junction Capacitance

Symbol

RWM

Conditions

=1mA

=3.3V

=5A

0Vdc Bias=f=1MHz

Min.

Typical

4.9

9.5

0.5

Max.

3.3

100

Units

µA

REV.0.3-DEC.23.2009

PAGE . 1

Recommended Resources

Proper Capacitor Selection Methods in Electronic Design

Fluorescent lamp circuit adapted to low voltage and low temperature Part 2b

AL3157 low noise charge pump DC conversion application circuit

Micro lead-acid battery charger circuit diagram

Audio vibration thawing circuit

Telephone schematic diagram 05

To mourn the victims of Yushu, today EEWORLD's homepage and forum homepage turned gray and white: Please understand...; 向农 Talking

Computer Central Monitoring System for Automobile Paint Shop: In recent years, automation technology based on computer software and hardware technology has developed to a new level and has shown strong vitality and application prospects. It is certain that autom...; frozenviolet Automotive Electronics

【SensorTag】the eleventh week: Control computer startup: I had finished writing the last part, so I didn't want to write this one, because I used the third spare computer, which was very broken, and I was afraid that everyone would hit me with bricks. The s...; ddllxxrr Wireless Connectivity

Application of Programmable Controller in the Reconstruction of Electrical Control System: The working principle of the impact tester is introduced, and the relay contact control system of the impact tester is replaced by a Siemens small programmable controller (012) to achieve the transfor...; frozenviolet FPGA/CPLD

Questions about storage and memory for ARM: I am new to ARM and would like to ask about storage and memory. First of all, the storage problem. In the past, 51 was generally used with eeprom and SD or CF cards. In ARM applications, I found that ...; heich_tech Microcontroller MCU

Evolution, Analysis and Comparison of High Voltage and High Power Converter Topologies: Abstract: The development of high-voltage and high-power converter topologies is described, and they are analyzed and compared, pointing out their respective advantages and disadvantages. The cascade ...; zbz0529 Analog electronics

Popular Components