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DATA SHEET
SILICON TRANSISTOR
2SB1628
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
The 2SB1628 features high current capacity in small dimension
and is ideal for DC/DC converters and mortor drivers.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• High current capacitance
• Low collector saturation voltage
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
Electrode connection
1: Emitter
2: Collector (fin)
3: Base
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
PW
≤
10 ms
Duty cycle
≤
50 %
Conditions
Ratings
−20
−16
−6.0
−3.0
−5.0
−0.2
PW
≤
10 ms
Duty cycle
≤
50 %
16 cm
2
×
0.7 mm ceramic board used
−0.4
Unit
V
V
V
A
A
Base current (DC)
Base current (pulse)
I
B(DC)
I
B(pulse)
A
A
Total power dissipation
Junction temperature
Storage temperature
P
T
T
j
T
stg
2.0
150
−55
to +150
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16148EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
Microcontroller MCU
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