DATA SHEET
NPN SILICON RF TRANSISTOR
2SC3355
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
DESCRIPTION
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
It has lange dynamic range and good current characteristic.
FEATURES
• Low noise and high gain
NF = 1.1 dB TYP., G
a
= 8.0 dB TYP. @ V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
NF = 1.8 dB TYP., G
a
= 9.0 dB TYP. @ V
CE
= 10 V, I
C
= 40 mA, f = 1 GHz
• High power gain : MAG = 11 dB TYP. @ V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
ORDERING INFORMATION
Part Number
2SC3355
2SC3355-T
Quantity
500 pcs (Non reel)
2.5 kpcs/box (Box type)
Supplying Form
• 18 mm wide radial taping
• Supplying paper tape with in a box
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 500 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Ratings
20
12
3.0
100
600
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10208EJ01V0DS (1st edition)
(Previous No. P10355EJ3V1DS00)
Date Published April 2003 CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
NEC Compound Semiconductor Devices 1985, 2003
2SC3355
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
Output Capacitance
f
T
S
21e
2
NF
NF
C
ob
Note 2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 10 V, I
E
= 0 mA
V
EB
= 1.0 V, I
C
= 0 mA
V
CE
= 10 V, I
C
= 20 mA
–
–
50
–
–
120
1.0
1.0
300
µ
A
µ
A
–
V
CE
= 10 V, I
C
= 20 mA
V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 10 V, I
C
= 40 mA, f = 1 GHz
V
CB
= 10 V, I
E
= 0 mA, f = 1 MHz
–
–
–
–
–
6.5
9.5
1.1
1.8
0.65
–
–
–
3.0
1.0
GHz
dB
dB
dB
pF
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
K
K
50 to 300
2
Data Sheet PU10208EJ01V0DS
2SC3355
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
°
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance C
re
(pF)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2
f = 1 MHz
1 250
Total Power Dissipation P
tot
(mW)
Heat sink
(Aluminum)
3.8 mm
With heat sink
750
10 mm
1 000
19 mm
1
500
Free air
250
7.8 mm
0.5
0
25
50
75
100
125
150
0.3
0.2
0.5
1
2
5
10
20 30
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
V
CE
= 10 V
5
V
CE
= 10 V
DC Current Gain h
FE
100
2
1
0.5
50
20
0.2
0.1
0.1
10
0.5
1
5
10
50
0.5
1
5
10
50 100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
15
Insertion Power Gain |S
21e
|
2
(dB)
25
MAG
20
|S
21e
|
2
15
V
CE
= 10 V
f = 1 GHz
10
10
5
5
V
CE
= 10 V
I
C
= 20 mA
0
0.05
0.1
0.2
0.5
1
2
0
0.5
1
5
10
50 70
Frequency f (GHz)
Collector Current I
C
(mA)
Data Sheet PU10208EJ01V0DS
3
2SC3355
NOISE FIGURE vs.
COLLECTOR CURRENT
7
6
Noise Figure NF (dB)
3rd Order Intermodulation Distortion IM
3
(dB)
2nd Order Intermodulation Distortion IM
2
(dB)
IM
3
, IM
2
vs. COLLECTOR CURRENT
–100
–90
–80
–70
–60
–50
–40
–30
20
30
40
50
60
70
V
CE
= 10 V
V
o
= 100 dB
µ
V/50
Ω
R
g
= R
e
= 50
Ω
IM
2
: f = 90 + 100 MHz
IM
3
: f = 2 × 200 – 190 MHz
V
CE
= 10 V
f = 1 GHz
5
4
3
2
1
0
0.5
1
5
10
50 70
IM
3
IM
2
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
→
[Device Parameters]
URL http://www.csd-nec.com/
4
Data Sheet PU10208EJ01V0DS
stm32/stm8
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