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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3575
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3575 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
5
ORDERING INFORMATION
PART NUMBER
2SK3575
2SK3575-S
2SK3575-ZK
2SK3575-Z
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMD
Note
FEATURES
•4.5V
drive available
•Low
on-state resistance
R
DS(on)1
= 4.5 mΩ MAX. (V
GS
= 10 V, I
D
= 42 A)
•Low
gate charge
Q
G
= 70 nC TYP. (V
DD
= 24 V, V
GS
= 10 V, I
D
= 83 A)
•Avalanche
capability ratings
•Surface
mount device available
Note
TO-220SMD package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
30
±20
±83
±332
1.5
105
150
–55 to +150
57
325
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16261EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP(K)
Printed in Japan
The mark
!
shows major revised points.
©
2002
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