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PACDN043Y4/R

Description
UNIDIRECTIONAL, 3 ELEMENT, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size111KB,2 Pages
ManufacturerCalifornia Micro Devices
Environmental Compliance
Download Datasheet Parametric View All

PACDN043Y4/R Overview

UNIDIRECTIONAL, 3 ELEMENT, SILICON, TVS DIODE

PACDN043Y4/R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCalifornia Micro Devices
package instructionR-PDSO-G4
Reach Compliance Codeunknown
ConfigurationCOMMON ANODE, 3 ELEMENTS
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-G4
Humidity sensitivity levelNOT SPECIFIED
Number of components3
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
surface mountYES
technologyAVALANCHE
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
CALIFORNIA MICRO DEVICES
PACDN042/043/
044/045/046
Applications
• ESD protection of PC ports, e.g. USB port.
• Protection of interface ports or IC pins
which are exposed to high levels of ESD.
TRANSIENT VOLTAGE SUPPRESSOR ARRAYS
Features
• 2, 3, 4, 5, or 6 transient voltage suppressors in a single
surface-mount package.
• Compact SMT packages save board space and ease
layout in space critical applications compared to
discrete solutions.
• In-system ESD protection to 20kV contact discharge
per IEC 61000-4-2 International Standard.
Product Description
The PACDN042, PACDN043, PACDN044, PACDN045, and PACDN046 are transient voltage suppressor arrays that provide a
very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge (ESD). The
devices are designed and characterized to safely dissipate ESD strikes at levels well beyond the maximum requirements set
forth in the IEC 61000-4-2 International Standard (Level 4, 8kV contact discharge). All pins are rated at 20kV ESD using the
IEC 61000-4-2 contact discharge method.
Using the MIL-STD-883D (Method 3015) specification for Human Body Model (HBM) ESD, all pins are protected for contact
discharges to greater than 30kV.
Schematic Configurations
Parameter
STANDARD SPECIFICATIONS
Min.
5.5
5.6
-1.2
±30
±20
Typ.
Max.
Unit
V
Reverse Stand-off Voltage, I = 10uA
Signal Clamp Voltage:
Positive Clamp, 10mA
Negative Clamp, 10mA
In-system ESD withstand voltage*:
Human Body Model (MIL-STD -883D , method 3015)
IEC 61000-4-2, contact discharge method
Clamping voltage during ESD discharge
Positive
MIL-STD -883D (Method 3015), 8kV
Negative
Capacitance @ 2.5V dc, 1 MHz
Temperature Range:
Operating
Storage
Package Power Rating:
SOT23, SOT23-5, SOT23-6,
SOT-143, TSSOP, MSOP
6.8
-0.8
8.0
-0.4
V
V
kV
kV
12
-8
30
-20
-65
85
150
0.225
0.5
V
V
pF
°C
W
W
* ESD applied between channel pin and ground, one at a time. All other channels are open. All GND pins grounded.
This parameter is guaranteed by design and characterization..
Note: ‘GND’ in this document refers to the lower supply voltage.
© 2000 California Micro Devices Corp. All rights reserved.
4/00
C0290498D
215 Topaz Street, Milpitas, California 95035
Tel: (408) 263-3214
Fax: (408) 263-7846
www.calmicro.com
1

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