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Datasheet> All Categories > storage> storage> MT28F322D18FH-10TET
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MT28F322D18FH-10TET

Description
Memory Circuit, 2MX16, CMOS, PBGA58, FBGA-58
Categorystorage    storage   
File Size675KB，48 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
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MT28F322D18FH-10TET Overview

Memory Circuit, 2MX16, CMOS, PBGA58, FBGA-58

MT28F322D18FH-10TET Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicron Technology
Parts packaging codeBGA
package instructionFBGA-58
Contacts58
Reach Compliance Codeunknown
Maximum access time100 ns
startup blockTOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B58
JESD-609 codee0
length12 mm
memory density33554432 bit
Memory IC TypeMEMORY CIRCUIT
memory width16
Number of functions1
Number of departments/size8,63
Number of terminals58
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA58,8X13,30
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
page size4 words
Parallel/SerialPARALLEL
power supply1.8 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Department size8K,64K
Maximum standby current0.000001 A
Maximum slew rate0.08 mA
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.65 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
switch bitNO
typeNOR TYPE
width7 mm

Preview

Download Datasheet
2 MEG x 16
ASYNC/PAGE/BURST FLASH MEMORY
FLASH MEMORY
MT28F322D20
MT28F322D18
Low Voltage, Extended Temperature
0.22µm Process Technology
FEATURES
• Flexible dual-bank architecture
– Support for true concurrent operation with zero
latency
– Read bank
a
during program bank
b
and vice versa
– Read bank
a
during erase bank
b
and vice versa
• Basic configuration:
Seventy-one erasable blocks
– Bank
a
(8Mb for data storage)
– Bank
b
(24Mb for program storage)
• V
CC
, V
CC
Q, V
PP
voltages*
– 1.65V (MIN), 1.95V (MAX) V
CC
, V
CC
Q
(MT28F322D18 only)
– 1.80V (MIN), 2.20V (MAX) V
CC
, V
CC
Q
(MT28F322D20 only)
– 0.9V (TYP) V
PP
(in-system PROGRAM/ERASE)
– 12V ±5% (HV) V
PP
tolerant (factory programming
compatibility)
• Random access time: 95ns @ 1.80V V
CC
*
• Burst Mode read access
– MAX clock rate: 40 MHz (
t
CLK = 25ns)
– Burst latency: 100ns @ 1.80V V
CC
and 40 MHz
–
t
ACLK: 24ns @ 1.80V V
CC
and 40 MHz
• Page Mode read access*
– Eight-word page
– Interpage read access: 95ns @ 1.80V
– Intrapage read access: 35ns @ 1.80V
• Low power consumption (V
CC
= 1.95V)
– READ < 15mA (MAX)
– Standby < 50µA
– Automatic power saving feature (APS)
• Enhanced write and erase suspend options
– ERASE-SUSPEND-to-READ within same bank
– PROGRAM-SUSPEND-to-READ within same bank
– ERASE-SUSPEND-to-PROGRAM within same bank
• Dual 64-bit chip protection registers for security
purposes
• Cross-compatible command support
– Extended command set
– Common flash interface
• PROGRAM/ERASE cycle
– 100,000 WRITE/ERASE cycles per block
*Data based on MT28F322D20 device.
BALL ASSIGNMENT
58-Ball FBGA
1
A
B
C
D
E
F
G
A11
2
A8
3
V
SS
4
V
CC
5
V
PP
6
A18
7
A6
8
A4
A12
A9
A20
CLK
RST#
A17
A5
A3
A13
A10
ADV#
WE#
A19
A7
A2
A15
A14
WAIT#
A16
DQ12
WP#
A1
V
CC
Q
DQ15
DQ6
DQ4
DQ2
DQ1
CE#
A0
V
SS
DQ14
DQ13
DQ11
DQ10
DQ9
DQ0
OE#
DQ7
V
SS
Q
DQ5
V
CC
DQ3
V
CC
Q
DQ8
V
SS
Q
Top View
(Ball Down)
NOTE:
See page 7 for Ball Description Table.
See page 47 for mechanical drawing.
OPTIONS
• Timing
95ns access
100ns access
110ns access
• Frequency
40 MHz
30 MHz
No burst operation
• Boot Block Starting Address
Top (FFFFFh)
Bottom (00000h)
• Package
58-ball FBGA (8 x 7 ball grid)
• Operating Temperature Range
Extended (-40ºC to +85ºC)
Part Number Example:
MARKING
-95
-10
-11
4
3
None
T
B
FH
ET
MT28F322D20FH-954
2 Meg x 16 Async/Page/Burst Flash Memory
MT28F322D18FH_6.p65 – Rev. 6, Pub. 6/01
1
©2001, Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

MT28F322D18FH-10TET Related Products

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Description Memory Circuit, 2MX16, CMOS, PBGA58, FBGA-58 Memory Circuit, 2MX16, CMOS, PBGA58, FBGA-58 Memory Circuit, 2MX16, CMOS, PBGA58, FBGA-58 Memory Circuit, 2MX16, CMOS, PBGA58, FBGA-58 Memory Circuit, 2MX16, CMOS, PBGA58, FBGA-58 Memory Circuit, 2MX16, CMOS, PBGA58, FBGA-58 Memory Circuit, 2MX16, CMOS, PBGA58, FBGA-58 Memory Circuit, 2MX16, CMOS, PBGA58, FBGA-58 Memory Circuit, 2MX16, CMOS, PBGA58, FBGA-58
Parts packaging code BGA BGA BGA BGA BGA BGA BGA BGA BGA
package instruction FBGA-58 TFBGA, TFBGA, FBGA-58 FBGA-58 FBGA-58 FBGA-58 FBGA-58 TFBGA,
Contacts 58 58 58 58 58 58 58 58 58
Reach Compliance Code unknown unknow unknow not_compliant unknown not_compliant not_compliant not_compliant unknown
JESD-30 code R-PBGA-B58 R-PBGA-B58 R-PBGA-B58 R-PBGA-B58 R-PBGA-B58 R-PBGA-B58 R-PBGA-B58 R-PBGA-B58 R-PBGA-B58
JESD-609 code e0 e1 e1 e0 e0 e0 e0 e0 e1
length 12 mm 12 mm 12 mm 12 mm 12 mm 12 mm 12 mm 12 mm 12 mm
memory density 33554432 bit 33554432 bi 33554432 bi 33554432 bit 33554432 bit 33554432 bit 33554432 bit 33554432 bit 33554432 bit
Memory IC Type MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT
memory width 16 16 16 16 16 16 16 16 16
Number of functions 1 1 1 1 1 1 1 1 1
Number of terminals 58 58 58 58 58 58 58 58 58
word count 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words
character code 2000000 2000000 2000000 2000000 2000000 2000000 2000000 2000000 2000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
organize 2MX16 2MX16 2MX16 2MX16 2MX16 2MX16 2MX16 2MX16 2MX16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TFBGA TFBGA TFBGA TFBGA TFBGA TFBGA TFBGA TFBGA TFBGA
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
Maximum supply voltage (Vsup) 1.95 V 2.2 V 2.2 V 1.95 V 1.95 V 1.95 V 1.95 V 1.95 V 2.2 V
Minimum supply voltage (Vsup) 1.65 V 1.8 V 1.8 V 1.65 V 1.65 V 1.65 V 1.65 V 1.65 V 1.8 V
Nominal supply voltage (Vsup) 1.8 V 2 V 2 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 2 V
surface mount YES YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal surface Tin/Lead (Sn/Pb) TIN SILVER COPPER TIN SILVER COPPER Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) TIN SILVER COPPER
Terminal form BALL BALL BALL BALL BALL BALL BALL BALL BALL
Terminal pitch 0.75 mm 0.75 mm 0.75 mm 0.75 mm 0.75 mm 0.75 mm 0.75 mm 0.75 mm 0.75 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
width 7 mm 7 mm 7 mm 7 mm 7 mm 7 mm 7 mm 7 mm 7 mm
Is it Rohs certified? incompatible - - incompatible incompatible incompatible incompatible incompatible -
Maker Micron Technology Micron Technology Micron Technology - Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
Maximum access time 100 ns - - 100 ns 110 ns 100 ns 100 ns 110 ns -
startup block TOP - - TOP BOTTOM BOTTOM BOTTOM TOP -
command user interface YES - - YES YES YES YES YES -
Universal Flash Interface YES - - YES YES YES YES YES -
Data polling NO - - NO NO NO NO NO -
Number of departments/size 8,63 - - 8,63 8,63 8,63 8,63 8,63 -
Encapsulate equivalent code BGA58,8X13,30 - - BGA58,8X13,30 BGA58,8X13,30 BGA58,8X13,30 BGA58,8X13,30 BGA58,8X13,30 -
page size 4 words - - 4 words 4 words 4 words 4 words 4 words -
Parallel/Serial PARALLEL - - PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL -
power supply 1.8 V - - 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V -
Department size 8K,64K - - 8K,64K 8K,64K 8K,64K 8K,64K 8K,64K -
Maximum standby current 0.000001 A - - 0.000001 A 0.000001 A 0.000001 A 0.000001 A 0.000001 A -
Maximum slew rate 0.08 mA - - 0.08 mA 0.08 mA 0.08 mA 0.08 mA 0.08 mA -
switch bit NO - - NO NO NO NO NO -
type NOR TYPE - - NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE -

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