INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
2SD1692
DESCRIPTION
·Collector–Emitter
Sustaining Voltage—
: V
CEO(SUS)
= 100V(min.)
·DC
Current Gain—
: h
FE
= 2000(Min.) @ I
C
= 1.5 A
·Complement
to Type 2SB1149
APPLICATIONS
·Designed
for general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
I
CM
Collector Current-Continuous
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
150
V
100
V
8
V
±3
±5
A
A
1.3
W
15
℃
℃
Collector Current-Peak
Collector Power Dissipation
T
a
=25℃
P
C
Collector Power Dissipation
T
C
=25℃
T
i
T
stg
Junction Temperature
150
Storage Temperature Range
-55~150
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SD1692
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 3A; I
B
= 3mA, L= 1.0mH
B
100
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 1.5A; I
B
= 1.5mA
1.2
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 1.5A; I
B
= 1.5mA
2.0
V
I
CBO
Collector Cutoff Current
V
CB
= 100V
;
I
E
= 0
10
μA
I
CEO
Collector Cutoff Current
V
CE
= 100V; R
BE
=
∞
1.0
mA
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
Switching Times
t
on
t
stg
t
f
Turn-on Time
Storage Time
Fall Time
w
L
.cn
i
em
cs
.is
w
w
I
C
= 1.5 A; V
CE
= 2V
2000
I
C
= 3 A; V
CE
= 2V
1000
I
C
=
1.5A, I
B1
= -I
B2
= 1.5mA;
R
L
= 27Ω; V
CC
≈
40V
20000
0.5
μs
μs
μs
2.0
1.0
h
FE-1
Classifications
M
2000-5000
K
8000-20000
4000-12000
isc Website：www.iscsemi.cn
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