Preliminary
Datasheet
BCR16CS-16LB
800V-16A-Triac
Medium Power Use
Features
I
T (RMS)
: 16 A
V
DRM
: 800 V
I
FGTI
, I
RGTI
, I
RGT III
: 30 mA
The product guaranteed maximum junction
temperature of 150°C
Non-Insulated Type
Planar Passivation Type
R07DS0226EJ0200
Rev.2.00
Oct 19, 2015
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
2, 4
1.
2.
3.
4.
T1 Terminal
T2 Terminal
Gate Terminal
T2 Terminal
1
2
3
3
1
RENESAS Package code: PRSS0004AS-A
(Package name: TO-263)
4
RENESAS Package code: PRSS0004AR-A
(Package name: TO-262)
4
1 2 3
1 23
Applications
Contactless AC switch, light dimmer, electronic flasher unit, hair drier, control of household equipment such as TV sets,
stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control,
solid state relay, copying machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Symbol
V
DRM
V
DSM
Voltage class
16
800
960
Unit
V
V
R07DS0226EJ0200 Rev.2.00
Oct 19, 2015
Page 1 of 9
BCR16CS-16LB
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Ratings
16
160
106.5
5
0.5
10
2
– 40 to +150
– 40 to +150
1.3
Unit
A
A
A
2
s
W
W
V
A
C
C
g
Conditions
Preliminary
Commercial frequency，sine full wave
360° conduction，Tc = 125C
Note3
60Hzsinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2/0.1
—
10/1
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
30
30
30
—
1.4
—
Unit
mA
V
V
V
V
mA
mA
mA
V
C/W
V/s
Test conditions
Tj = 150C, V
DRM
applied
Tc = 25C, I
TM
= 25 A,
Instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125C/150C, V
D
= 1/2 V
DRM
Junction to case
Note3 Note4
Tj = 125C/150C
Gate trigger current
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Note5
Notes: 2.
3.
4.
5.
Measurement using the gate trigger characteristics measurement circuit.
Case temperature is measured on the T
2
tab.
The contact thermal resistance R
th (c-f)
in case of greasing is 1.0°C/W.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Test conditions
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = – 8.0 A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
R07DS0226EJ0200 Rev.2.00
Oct 19, 2015
Page 2 of 9
BCR16CS-16LB
Preliminary
Performance Curves
Maximum
On-State
Characteristics
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
0.5
1.0
1.5
200
Rated
Surge
On-State
Current
Surge
On-State
Current (A)
180
160
140
120
100
80
60
40
20
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
On-State
Current (A)
Tj = 150°C
Tj = 25°C
2.0
2.5
3.0
3.5
4.0
On-State
Voltage (V)
Conduction
Time
(Cycles at
60Hz)
Gate Trigger
Current (Tj
=
t°C)
×
100
(%)
Gate Trigger
Current (Tj
= 25°C)
Gate
Characteristics (I,
II
and
III)
3
2
Gate Trigger
Current vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
V
GM
= 10V
P
G(AV)
= 0.5W
P
GM
= 5W
I
GM
= 2A
Typical Example
Gate
Voltage (V)
10
1
7
5
3
2
10
0
7
5
3
2
I
RGT III
V
GT
= 1.5V
I
FGT I
, I
RGT I
10
–1
7
I
FGT I
, I
RGT I
, I
RGT III
V
GD
= 0.1V
5
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
10
1
–60 –40 –20 0 20 40 60 80 100 120 140 160
Gate
Current (mA)
Junction Temperature
(°C)
Gate Trigger
Voltage (Tj
=
t°C)
×
100
(%)
Gate Trigger
Voltage (Tj
= 25°C)
Gate Trigger
Voltage vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140 160
Maximum
Transient Thermal Impedance
Characteristics (Junction to case)
Typical Example
Transient Thermal Impedance
(°C/W)
10
2
2 3 5 7 10
3
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
Junction Temperature
(°C)
Conduction
Time
(Cycles at
60Hz)
R07DS0226EJ0200 Rev.2.00
Oct 19, 2015
Page 3 of 9
BCR16CS-16LB
Preliminary
Allowable
Case
Temperature
vs.
RMS On-State
Current
160
Maximum
On-State Power
Dissipation
40
On-State Power
Dissipation (W)
30
360°
Conduction
Resistive,
25
inductive loads
20
15
10
5
0
0
2
4
6
8 10 12 14 16 18 20
Case
Temperature
(°C)
35
140
120
Curves apply regardless
of conduction angle
100
80
60
40
360°
Conduction
20
Resistive,
inductive loads
0
0 2 4 6 8 10 12 14 16 18 20
RMS On-State
Current (A)
RMS On-State
Current (A)
Allowable Ambient Temperature
vs.
RMS On-State
Current
160
Allowable Ambient Temperature
vs.
RMS On-State
Current
160
Ambient Temperature
(°C)
120
100
80
60
120
×
120
×
t2.3
100
×
100
×
t2.3
Ambient Temperature
(°C)
140
All fins
are
black
painted
aluminum and greased
140
120
100
80
60
40
20
0
0
Natural
convection
No fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
60
×
60
×
t2.3
Curves apply
40
regardless of
conduction angle
20
Resistive, inductive loads
Natural
convection
0
0 2 4 6 8 10 12 14 16 18 20
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State
Current (A)
RMS On-State
Current (A)
Repetitive Peak Off-State
Current (Tj
=
t°C)
×
100
(%)
Repetitive Peak Off-State
Current (Tj
= 25°C)
Repetitive Peak Off-State
Current vs.
Junction Temperature
Holding
Current (Tj
=
t°C)
×
100
(%)
Holding
Current (Tj
= 25°C)
5
3
Typical Example
2
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140160
10
3
7
5
4
3
2
10
2
7
5
4
3
2
Holding
Current vs.
Junction Temperature
Typical Example
10
1
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature
(°C)
Junction Temperature
(°C)
R07DS0226EJ0200 Rev.2.00
Oct 19, 2015
Page 4 of 9
BCR16CS-16LB
Latching Current vs.
Junction
Temperature
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
T +
, G
+
2
2
Typical Example
T
2
–
, G
–
10
0
–40
0
40
80
Preliminary
Breakover Voltage vs.
Junction
Temperature
Breakover Voltage (Tj = t°C)
×
100
(%)
Breakover Voltage (Tj =
25°C)
160
140
120
100
80
60
40
20
0
–60 –40 –20
0 20
40
60 80 100 120 140 160
Typical Example
Latching Current (mA)
Distribution
T
2
+
, G
–
Typical Example
120
160
Junction
Temperature (°C)
Junction
Temperature (°C)
Breakover Voltage (dv/dt =
xV/μs)
×
100
(%)
Breakover Voltage (dv/dt =
1V/μs)
160
140
120
100
80
60
40
20
Breakover Voltage (dv/dt =
xV/μs)
×
100
(%)
Breakover Voltage (dv/dt =
1V/μs)
Breakover Voltage vs.
Rate
of
Rise
of
Off-State
Voltage (Tj=125°C)
Typical Example
Tj =
125°C
Breakover Voltage vs.
Rate
of
Rise
of
Off-State
Voltage (Tj=150°C)
160
140
120
100
80
60
40
Typical Example
Tj =
150°C
III Quadrant
III Quadrant
I Quadrant
I Quadrant
20
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
Rate
of
Rise
of
Off-State
Voltage (V/μs)
Rate
of
Rise
of
Off-State
Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
Critical
Rate
of
Rise
of
Off-State
Commutating Voltage (V/μs)
Critical
Rate
of
Rise
of
Off-State
Commutating Voltage (V/μs)
10
2
7
5
3
2
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Commutation Characteristics (Tj=150°C)
7
5
3
2
10
1
7
5
3
2
Minimum
10
0
7
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
Tj =
125°C
I
T
= 4A
τ
=
500μs
V
D
=
200V
f
=
3Hz
Typical Example
Tj =
150°C
I
T
= 4A
τ
=
500μs
V
D
=
200V
f
=
3Hz
10
1
7
Minimum
Characteristics
5
Value
3
2
III Quadrant
I Quadrant
I Quadrant
10
0
7
Characteristics
Value
III Quadrant
3
5 7 10
1
2 3
5 7 10
2
2 3
3
5 7 10
1
2 3
5 7 10
2
2 3
Rate
of Decay of
On-State
Commutating Current (A/ms)
Rate
of Decay of
On-State
Commutating Current (A/ms)
R07DS0226EJ0200 Rev.2.00
Oct 19, 2015
Page 5 of 9
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