MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR16CS
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR16CS
OUTLINE DRAWING
Dimensions
in mm
4
1.5 MAX
10.5 MAX
4.5
1.3
1.5 MAX
8.6±0.3
9.8±0.5
TYPE
NAME
∗
3.0
–0.5
+0.3
0
–0
+0.3
VOLTAGE
CLASS
1
5
0.8
0.5
1 2 3
24
2.6±0.4
4.5
∗
Measurement
point of case
temperature
• I
T (RMS)
...................................................................... 16A
• V
DRM
....................................................................... 600V
• I
FGT
!
, I
RGT
!
, I
RGT
#
............................................ 20mA
1
1
2
3 3
4
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
T
2
TERMINAL
TO-220S
APPLICATION
Contactless AC switches , light dimmer, electric flasher unit, hair drier,
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared
kotatsu · carpet · electric fan, solenoid drivers,
small motor control, copying machine, electric tool,
other general purpose control applications
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
½1
Non-repetitive peak off-state
voltage
½1
Voltage class
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Typical value
Conditions
Commercial frequency, sine full wave 360° conduction,
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
T
c
=100°C
½3
Ratings
16
170
121
5
0.5
10
2
–40 ~ +125
–40 ~ +125
1.2
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
½1.
Gate open.
Mar. 2002
(1.5)
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR16CS
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
(dv/dt)
c
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
½5
Parameter
Repetitive peak off-state current
On-state voltage
!
Gate trigger voltage
½2
@
#
!
Gate trigger
current
½2
@
#
T
j
=125°C, V
D
=1/2V
DRM
Junction to
T
j
=125°C
case
½3 ½4
Test conditions
T
j
=125°C, V
DRM
applied
T
c
=25°C, I
TM
=25A, Instantaneous measurement
Min.
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
20
20
20
—
1.4
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/
W
V/µs
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
—
—
—
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
—
—
0.2
—
10
½2.
Measurement using the gate trigger characteristics measurement circuit.
½3.
Case temperature is measured on the T2 terminal.
½4.
The contact thermal resistance R
th (c-f)
in case of greasing is 1.0°C/W.
½5.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
T
j
=125°C
2. Rate of decay of on-state commutating current
(di/dt)
c
=–8.0A/ms
3. Peak off-state voltage
V
D
=400V
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
TIME
V
D
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
RATED SURGE ON-STATE CURRENT
200
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
ON-STATE VOLTAGE (V)
T
j
= 125°C
T
j
= 25°C
180
160
140
120
100
80
60
40
20
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR16CS
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
(Ι,
ΙΙ
AND
ΙΙΙ)
100 (%)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
4
3
2
10
2
7
5
4
3
2
TYPICAL EXAMPLE
3
2 V
GM
= 10V
GATE VOLTAGE (V)
P
G(AV)
= 0.5W
P
GM
= 5W
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
10
1
7
5
3 V
GT
= 1.5V
2
10
0
7
5
3
2
I
GM
= 2A
I
RGT III
I
FGT I,
I
RGT I
I
FGT I,
I
RGT I,
I
RGT III
V
GD
= 0.2V
10
–1
7
5
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
GATE CURRENT (mA)
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
TYPICAL EXAMPLE
TRANSIENT THERMAL IMPEDANCE (°C/W)
10
2
2 3 5 7 10
3
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CASE TEMPERATURE (°C)
40
35
30 360°
CONDUCTION
25 RESISTIVE,
INDUCTIVE
20 LOADS
15
10
5
0
0
2
4
6
8 10 12 14 16 18 20
140
120
100
80
60
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
360°
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
0 2 4 6 8 10 12 14 16 18 20
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR16CS
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
AMBIENT TEMPERATURE (°C)
120
100
80
60
40
20
0
0
2
4
6
8 10 12 14 16 18 20
120 120 t2.3
100 100 t2.3
60 60 t2.3
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE COPPER
140 AND ALUMINUM
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
NO FINS
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
RESISTIVE, INDUCTIVE LOADS
100
80
60
40
20
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
100 (%)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10
5
7 TYPICAL EXAMPLE
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
100 (%)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
TYPICAL EXAMPLE
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
–40
100 (%)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT (mA)
DISTRIBUTION
+
T
2
, G
+
TYPICAL
½
–
T
2
, G
–
EXAMPLE
0
40
80
120
160
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
+
T
2
, G
–
TYPICAL
EXAMPLE
Mar. 2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR16CS
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
160
140
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
TYPICAL EXAMPLE
T
j
= 125°C
COMMUTATION CHARACTERISTICS
7
TYPICAL
5
EXAMPLE
3 T
j
= 125°C
2 I
T
= 4A
τ
= 500µs
V
D
= 200V
10
1
f = 3Hz
7
5
MINIMUM
3 CHARAC-
2 TERISTICS
VALUE
10
0
7
0
10
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
V
D
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
120
100
80
60
40
20
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
I QUADRANT
III QUADRANT
I QUADRANT
III QUADRANT
2 3
5 7 10
1
2 3
5 7 10
2
2 3
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
100 (%)
TYPICAL EXAMPLE
I
FGT I
I
RGT I
I
RGT III
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
6V
V
A
R
G
6V
V
A
R
G
TEST PROCEDURE
1
6Ω
TEST PROCEDURE
2
6V
V
A
R
G
GATE CURRENT PULSE WIDTH (µs)
TEST PROCEDURE
3
Mar. 2002
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