ZVN4106F
ZVN4106F
S
ISSUE 2 – DECEMBER 1995
PARMARKING DETAIL - MZ
D
V
GS
=3.5V
5V
6V
4V
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
4
100
V
GS
=20V
3
16V
14V
G
8V
12V
2
10V
10V
14V
20V
10
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
SYMBOL
VALUE
60
0.2
3
±
20
330
-55 to +150
UNIT
V
A
A
V
mW
°C
9V
8V
I
D
- Drain Current (A)
1
7V
6V
5V
4V
0
1
0.01
0.1
1
10
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate-Source Voltage
Max Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
V
DS
=10V
0
2
4
6
8
10
Saturation Characteristics
R
DS(on)
- Drain Source On Resistance (Ω)
V
DS
- Drain Source Voltage (V)
I
D
- Drain Current (A)
On-Resistance v Drain Current
1.8
300
I
D
=0.5A
R
DS(on)
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
150
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
C
iss
C
oss
C
rss
T
d(on)
Rise Time (2)(3)
1.8
MAX. UNIT CONDITIONS.
60
1.3
3
100
10
50
1
2.5
5
V
V
nA
µA
µA
A
Ω
Ω
I
D
=1mA, V
GS
=0V
I
D
=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=60V, V
GS
=0
V
DS
=48V, V
GS
=0V, T=125°C
(2)
V
DS
=25V, V
GS
=10V
V
GS
=10V, I
D
=500mA
V
GS
=5V, I
D
=200mA
1.2
200
Normalised R
DS(on)
and V
GS(th)
0
0
0.5
1.0
2.0
1.5
gfs - Transconductance (S)
0
0.6
V
GS(th)
100
-50
0
50
100
150
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
T
j
- Junction Temperature ( °C)
I
D(on)
- Drain Current (A)
Normalised R
DS(on)
& V
GS(th)
v Temperature
I
D
=0.5A
V
DD
=20V
40V
50V
Transconductance v Drain Current
80
16
Forward Transconductance(1)(2 g
fs
)
mS
35
25
8
5
T
r
7
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
T
d(off)
T
f
6
8
pF
pF
pF
ns
ns
ns
ns
V
DS
=25V, I
D
=250mA
60
12
40
8
V
DS
=25V, V
GS
=0V, f=1MHz
C
iss
20
4
C - Capacitance (pF)
C
oss
C
rss
0
15
0
0.6
30
45
V
GS
- Gate Source Voltage (V)
0
1.2
0
60
V
DD
≈25V,
I
D
=150mA
V
DS
- Drain Source Voltage (V)
Q - Charge (nC)
Capacitance v Drain Source Voltage
Gate Source Voltage v Gate Charge
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
(3) Switching times measured with 500Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 400
3 - 399
ZVN4106F
ZVN4106F
S
ISSUE 2 – DECEMBER 1995
PARMARKING DETAIL - MZ
D
V
GS
=3.5V
5V
6V
4V
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
4
100
V
GS
=20V
3
16V
14V
G
8V
12V
2
10V
10V
14V
20V
10
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
SYMBOL
VALUE
60
0.2
3
±
20
330
-55 to +150
UNIT
V
A
A
V
mW
°C
9V
8V
I
D
- Drain Current (A)
1
7V
6V
5V
4V
0
1
0.01
0.1
1
10
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate-Source Voltage
Max Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
V
DS
=10V
0
2
4
6
8
10
Saturation Characteristics
R
DS(on)
- Drain Source On Resistance (Ω)
V
DS
- Drain Source Voltage (V)
I
D
- Drain Current (A)
On-Resistance v Drain Current
1.8
300
I
D
=0.5A
R
DS(on)
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
150
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
C
iss
C
oss
C
rss
T
d(on)
Rise Time (2)(3)
1.8
MAX. UNIT CONDITIONS.
60
1.3
3
100
10
50
1
2.5
5
V
V
nA
µA
µA
A
Ω
Ω
I
D
=1mA, V
GS
=0V
I
D
=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=60V, V
GS
=0
V
DS
=48V, V
GS
=0V, T=125°C
(2)
V
DS
=25V, V
GS
=10V
V
GS
=10V, I
D
=500mA
V
GS
=5V, I
D
=200mA
1.2
200
Normalised R
DS(on)
and V
GS(th)
0
0
0.5
1.0
2.0
1.5
gfs - Transconductance (S)
0
0.6
V
GS(th)
100
-50
0
50
100
150
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
T
j
- Junction Temperature ( °C)
I
D(on)
- Drain Current (A)
Normalised R
DS(on)
& V
GS(th)
v Temperature
I
D
=0.5A
V
DD
=20V
40V
50V
Transconductance v Drain Current
80
16
Forward Transconductance(1)(2 g
fs
)
mS
35
25
8
5
T
r
7
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
T
d(off)
T
f
6
8
pF
pF
pF
ns
ns
ns
ns
V
DS
=25V, I
D
=250mA
60
12
40
8
V
DS
=25V, V
GS
=0V, f=1MHz
C
iss
20
4
C - Capacitance (pF)
C
oss
C
rss
0
15
0
0.6
30
45
V
GS
- Gate Source Voltage (V)
0
1.2
0
60
V
DD
≈25V,
I
D
=150mA
V
DS
- Drain Source Voltage (V)
Q - Charge (nC)
Capacitance v Drain Source Voltage
Gate Source Voltage v Gate Charge
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
(3) Switching times measured with 500Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 400
3 - 399
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