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SMP40P06

Description
Power Field-Effect Transistor, 40A I(D), 60V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
CategoryDiscrete semiconductor    The transistor   
File Size206KB,4 Pages
ManufacturerTEMIC
Websitehttp://www.temic.de/
Download Datasheet Parametric View All

SMP40P06 Overview

Power Field-Effect Transistor, 40A I(D), 60V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

SMP40P06 Parametric

Parameter NameAttribute value
MakerTEMIC
Reach Compliance Codeunknown
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)40 A
Maximum drain-source on-resistance0.045 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)100 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
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