ZXGD3004E6
40V 8A GATE DRIVER IN SOT26
Description
The ZXGD3004E6 is a high-speed, non-inverting single gate driver
designed for switching MOSFETs or IGBTS. It can transfer up to 8A
peak source/source current into the gate for effective charging and
discharging of the capacitive gate load.
This gate driver ensures rapid switching of the MOSFET to minimize
power losses and distortion in high current switching applications. It can
typically drive 1.9A into the low gate impedance with just 10mA input
from a controller. The turn-on and turn-off switching behaviour of the
MOSFET can be individually tailored to suit an application. By defining
the switching characteristics appropriately, EMI and cross conduction
can be reduced.
Features
High-Gain Buffer with Typically 1.9A Output from 10mA Input
8 Amps Peak Output Current
40V Supply for +20V to -18V Gate Driving to Prevent dV/dt
Induced False Triggering and Minimize On-Losses
Emitter-Follower that is Rugged to Latch-Up/Shoot-Though
Fast Switching Emitter-Follower Configuration
1ns Propagation Delay Time
14ns Rise/Fall Time, 1500pF load
Optimized Pin-Out to Simplify PCB Layout and Reduce
Parasitic Trace Inductances
Near-Zero Quiescent Supply Current
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (ZXGD3004E6Q)
Applications
Gate Driving Power MOSFET and IGBTs in:
AC-DC Power Supplies (SMPS)
DC-DC Converters
DC-AC Inverters (i.e. Solar)
1, 2 and 3-Phase Motor Control Circuits
Amplifier Output Stages
Mechanical Data
Case: SOT26
Case Material: Molded Plastic. ―Green‖ Molding Compound;
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.018 grams (Approximate)
SOT26
Pin Name
V
CC
IN
1
& IN
2
V
EE
SOURCE
SINK
Pin Function
Driver Supply High
Driver Input *
Supply Voltage Low
Source Current Output **
Sink Current Output **
Top View
Top View
Pin-Out
* Typically connect IN1 & IN2 together
** Typically connect SOURCE & SINK together
Ordering Information
(Note 4)
Product
ZXGD3004E6TA
Notes:
Compliance
AEC-Q101
Marking
3004
Reel Size (inches)
7
Tape Width (mm)
8
Quantity per Reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See http://www.diodes.com/quality/lead_free/ for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.
3. Halogen and Antimony free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
ZXGD3004E6
Document Number DS33382
Rev. 2 - 2
1 of 8
www.diodes.com
March 2018
© Diodes Incorporated
ZXGD3004E6
Absolute Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Supply Voltage, with Respect to V
EE
Input Voltage, with Respect to V
EE
Output Difference Voltage (Source – Sink)
Peak Pulsed Output Current (Source – Sink)
Peak Pulsed Input Current
Symbol
V
CC
V
IN
V
(SOURCE-SINK)
I
OM
I
IN1,
I
IN2
Value
40
40
±7
±8
±1
Unit
V
V
V
A
A
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Power Dissipation (Notes 5 & 6)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Notes 5 & 6)
Thermal Resistance, Junction to Lead (Note 7)
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
1.1
8.8
113
105
-55 to +150
Unit
W
mW/°
C
°
C/W
°
C
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Electrostatic Discharge – Charged Device Model
Notes:
Symbol
ESD HBM
ESD MM
ESD CDM
Value
4,000
400
1,000
Unit
V
V
V
JEDEC Class
3A
C
IV
5. For a device mounted on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst
operating in a steady-state. The heatsink is split in half with the pin 1 (V
CC
) and pin 3 (V
EE
) connected separately to each half.
6. For device with two active die running at equal power.
7. Thermal resistance from junction to solder-point at the end of each lead on pin 1 (V
CC
) and pin 3 (V
EE
).
8. Refer to JEDEC specification JESD22-A114, JESD22-A115 and JESD22-C101.
ZXGD3004E6
Document Number DS33382
Rev. 2 - 2
3 of 8
www.diodes.com
March 2018
© Diodes Incorporated
ZXGD3004E6
Electrical Characteristics
Characteristic
Output Voltage, High
Output Voltage, Low
Source Output Leakage Current
Sink Output Leakage Current
Quiescent Supply Current
Peak Pulsed Source Output Current
Peak Pulsed Sink Output Current
Peak Pulsed Source Output Current
Peak Pulsed Sink Output Current
Gate Driver Switching Times
(@T
A
= +25° unless otherwise specified.)
C,
Symbol
V
OUT(hi)
V
OUT(low)
I
L(source)
I
L(sink)
I
Q
I
(source)M
I
(sink)M
I
(source)M
I
(sink)M
t
d(rise)
t
r
t
d(fall)
t
f
t
d(rise)
t
r
t
d(fall)
t
f
Min
—
—
—
—
—
1.2
1.2
—
—
Typ
V
IN1
- 0.4
V
IN1
+ 0.4
—
—
—
1.9
1.9
8
8
1.1
13.4
0.95
12.4
3.2
77.9
3.6
82
Max
—
—
1
1
50
—
—
—
—
Unit
V
µA
µA
nA
A
A
A
A
I
source
= 1µA
I
sink
= 1µA
V
CC
= 40V,
V
IN1
= V
IN2
= 0V
V
CC
= 40V,
V
IN1
= V
IN2
= V
CC
V
CC
= 32V,
V
IN1
= V
IN2
= 0V
I
IN1
+ I
IN2
= 10mA
I
IN1
+ I
IN2
= -10mA
I
IN1
+ I
IN2
= 1A
I
IN1
+ I
IN2
= -1A
V
CC
= 15V, V
EE
= 0V,
V
IN
= 0 to 12.5V,
C
L
= 1.5nF, R
L
= 0.1Ω,
R
IN
= 25Ω
V
CC
= 15V, V
EE
= 0V,
V
IN
= 0 to 12.5V,
C
L
= 1.5nF, R
L
= 0.1Ω,
R
IN
= 1kΩ
Test Condition
—
—
ns
Gate Driver Switching Times
—
—
ns
Switching Test Circuit and Timing Diagram
V
CC
ZXGD3004E6
V
EE
ZXGD3004E6
Document Number DS33382
Rev. 2 - 2
4 of 8
www.diodes.com
March 2018
© Diodes Incorporated
PCB Design
京公网安备 11010802033920号
EEWORLD
