UNISONIC TECHNOLOGIES CO., LTD
S8550
LOW VOLTAGE HIGH
CURRENT SMALL SIGNAL PNP
TRANSISTOR
DESCRIPTION
1
TO-92
NPN SILICON TRANSISTOR
The UTC
S8550
is a low voltage high current small signal PNP
transistor, designed for Class B push-pull audio amplifier and
general purpose applications.
FEATURES
* Collector current up to 700mA
* Collector-Emitter voltage up to 20 V
* Complementary to UTC S8050
ORDERING INFORMATION
Order Number
Lead Free Plating
Halogen Free
S8550L-x-T92-B
S8550G-x-T92-B
S8550L-x-T92-K
S8550G-x-T92-K
Package
TO-92
TO-92
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Box
Bulk
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S8550
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
-30
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-700
mA
Collector Dissipation (T
A
=25°C)
P
C
1
W
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(
T
A
=25°C, unless otherwise specified.)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE(SAT)
V
BE(SAT)
V
BE
f
T
Cob
TEST CONDITIONS
I
C
=-100μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100μA, I
C
=0
V
CB
=-30V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-1mA
V
CE
=-1V, I
C
=-150mA
V
CE
=-1V, I
C
=-500mA
I
C
=-500mA, I
B
=-50mA
I
C
=500mA, I
B
=-50mA
V
CE
=-1V, I
C
=-10mA
V
CE
=-10V, I
C
=-50mA
V
CB
=10V, I
E
=0, f =1MHz
MIN
-30
-20
-5
TYP
MAX
UNIT
V
V
V
μA
nA
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
-1
-100
100
120
40
400
-0.5
-1.2
-1.0
100
9.0
V
V
V
MHz
pF
CLASSIFICATION OF hFE2
RANK
RANGE
C
120-200
D
160-300
E
280-400
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S8550
TYPICAL CHARACTERISTICS
Static Characteristics
-0.5
-0.4
-0.3
-0.2
-0.1
0
I
B
=-3.0mA
I
B
=-2.5mA
I
B
=-2.0mA
I
B
=-1.5mA
I
B
=-1.0mA
I
B
=-0.5mA
DC Current Gain, h
FE
10
2
10
3
PNP SILICON TRANSISTOR
DC Current Gain
Collector Current, I
C
(mA)
V
CE
=-1V
10
1
0
-0.4
-0.8
-1.2
-1.6
-2.0
Collector-Emitter Voltage, V
CEO
(V)
Base-Emitter on Voltage
10
0
-10
-1
-10
0
-10
1
-10
2
Collector Current, I
C
(mA)
Saturation Voltage
-10
3
-10
2
Collector Current, I
C
(mA)
-10
4
I
C
=10xI
B
-10
1
Saturation Voltage, (mV)
V
CE
=-1V
-10
3
V
BE(SAT)
-10
0
-10
2
V
CE(SAT)
-10
1
-10
-1
-10
-1
0
-1.0
-0.2
-0.4
-0.6
-0.8
Base-Emitter Voltage, V
BEO
(V)
Current Gain-Bandwidth Product
-10
0
-10
1
-10
2
Collector Current, I
C
(mA)
-10
3
10
3
Current Gain-Bandwidth Product, f
T
(MHz)
10
3
Collector Output Capacitance
f=1MHz
I
E
=0
Capacitance, C
OB
(pF)
3
V
CE
=-10V
10
2
10
2
10
1
10
1
10
0
-10
0
-10
-10
Collector Current, I
C
(mA)
1
2
-10
10
0
-10
0
-10
1
-10
2
-10
3
Collector-Base Voltage, V
CBO
(V)
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QW-R201-014.B
S8550
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-014.B
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