CMLM0305GBKLEADFREE datasheet, PDF

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CMLM0305GBKLEADFREE: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size586KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CMLM0305GBKLEADFREE Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

CMLM0305GBKLEADFREE Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Central Semiconductor
package instruction	,
Reach Compliance Code	compliant
Configuration	Single
Maximum drain current (Abs) (ID)	0.28 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.35 W
surface mount	YES

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CMLM0305

CMLM0305G*

Multi Discrete Module

™

SURFACE MOUNT

N-CHANNEL MOSFET AND

LOW VF SILICON SCHOTTKY DIODE

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLM0305 and

CMLM0305G are Multi Discrete Modules™ consisting

of a single N-Channel Enhancement-mode MOSFET

and a Low VF Schottky diode packaged in a space

saving PICOmini™ SOT-563 surface mount case. This

device is designed for small signal general purpose

applications where size and operational efficiency are

prime requirements.

MARKING CODES: CMLM0305:

5C3

CMLM0305G*: 5CG

SOT-563 CASE

*

Device is

Halogen Free

by design

FEATURES:

• ESD protection up to 2kV

• Low rDS(on) Transistor (3Ω MAX @ VGS=1.8V)

• Low VF Schottky Diode (0.47V MAX @ 0.5A)

SYMBOL

PD

TJ, Tstg

Θ

JA

SYMBOL

VDS

VDG

VGS

ID

IDM

SYMBOL

VRRM

IF

IFRM

IFSM

350

300

150

-65 to +150

357

UNITS

mW

°C

°C/W

UNITS

V

mA

A

UNITS

V

mA

A

APPLICATIONS:

• DC / DC Converters

• Battery Powered Portable Equipment

MAXIMUM RATINGS - CASE:

(TA=25°C)

Power Dissipation (Note 1)

Power Dissipation (Note 2)

Power Dissipation (Note 3)

Operating and Storage Junction Temperature

Thermal Resistance

MAXIMUM RATINGS - Q1:

(TA=25°C)

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source Voltage

Continuous Drain Current

Maximum Pulsed Drain Current

MAXIMUM RATINGS - D1:

(TA=25°C)

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current, tp≤1.0ms

Peak Forward Surge Current, tp= 8.0ms

50

12

280

1.5

40

500

3.5

10

ELECTRICAL CHARACTERISTICS - Q1:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

IGSSF, IGSSR

VGS=5.0V

100

IGSSF, IGSSR

VGS=10V

2.0

IGSSF, IGSSR

VGS=12V

2.0

VDS=50V, VGS=0

50

IDSS

50

BVDSS

VGS=0, ID=10μA

VGS(th)

VDS=VGS, ID=250μA

0.49

1.0

Notes:

(1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm

2

(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm

2

(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm

2

UNITS

nA

μA

nA

V

R3 (18-January 2010)

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Description	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, PICOMINI-6	Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, PICOMINI-6	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, PICOMINI-6	Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, PICOMINI-6
Is it Rohs certified?	conform to	conform to	incompatible	incompatible	conform to	incompatible	incompatible
package instruction	,	,	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	,	SMALL OUTLINE, R-PDSO-F6	HALOGEN FREE, PICOMINI-6
Reach Compliance Code	compliant	compliant	not_compliant	not_compliant	compliant	not_compliant	unknown
Configuration	Single	Single	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	Single	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Maximum drain current (Abs) (ID)	0.28 A	0.28 A	0.28 A	0.28 A	0.28 A	0.28 A	0.28 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W
surface mount	YES	YES	YES	YES	YES	YES	YES
Maker	Central Semiconductor	-	-	-	Central Semiconductor	Central Semiconductor	Central Semiconductor
JESD-609 code	-	e3	e0	e0	-	e0	e3
Terminal surface	-	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	MATTE TIN
Contacts	-	-	6	6	-	6	6
ECCN code	-	-	EAR99	EAR99	-	EAR99	EAR99
Minimum drain-source breakdown voltage	-	-	50 V	50 V	-	50 V	50 V
Maximum drain current (ID)	-	-	0.28 A	0.28 A	-	0.28 A	0.28 A
Maximum drain-source on-resistance	-	-	3 Ω	3 Ω	-	3 Ω	3 Ω
Maximum feedback capacitance (Crss)	-	-	5 pF	5 pF	-	5 pF	5 pF
JESD-30 code	-	-	R-PDSO-F6	R-PDSO-F6	-	R-PDSO-F6	R-PDSO-F6
Number of components	-	-	1	1	-	1	1
Number of terminals	-	-	6	6	-	6	6
Package body material	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	-	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	-	-	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE
Certification status	-	-	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
Terminal form	-	-	FLAT	FLAT	-	FLAT	FLAT
Terminal location	-	-	DUAL	DUAL	-	DUAL	DUAL
transistor applications	-	-	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING
Transistor component materials	-	-	SILICON	SILICON	-	SILICON	SILICON

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