ZXM62N03G datasheet, PDF - EEWORLD Datasheet

NOT RECOMMENDED FOR NEW DESIGN

USE DMN3032LE and ZXMN6A11G

ZXM62N03G

Green

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

BV

DSS

R

DS(ON)

0.11Ω @ V

GS

= 10V

I

D

T

A

= +25°

C

4.7A

Features and Benefits



Low On-Resistance

Fast Switching Speed

Low Threshold

Low Gate Drive

Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

30V

Description and Applications

This MOSFET has been designed to minimize the on-state

resistance (R

DS(ON)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.



DC-DC Converters

Audio Output Stage

Relay and Solenoid Driving

Motor Control

Mechanical Data



Case: SOT223

Case Material: Molded Plastic, “Green” Molding Compound

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish



Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

e3

Weight: 0.112 grams (Approximate)

SOT223

D

G

S

Top View

Pin Out - Top

View

Equivalent Circuit

Ordering Information

(Note 4)

Part Number

ZXM62N03GTA

ZXM62N03GTC

Notes:

Marking

ZXM62N03

Reel Size (inches)

7

13

Tape Width (mm)

12

Quantity Per Reel

1,000

4,000

1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

SOT223

ZVN

ZXM6

2N03

4310

ZXM62N03 = Product Type Marking Code

YWW = Date Code Marking

Y or Y = Last Digit of Year (ex: 5 = 2015)

WW or WW = Week Code (01 to 53)

YWW

ZXM62N03G

Document number: DS33481 Rev. 4 - 3

1 of 7

www.diodes.com

January 2017

NOT RECOMMENDED FOR NEW DESIGN

USE DMN3032LE and ZXMN6A11G

ZXM62N03G

Maximum Ratings

(@T

A

= +25° unless otherwise specified.)

C,

Characteristic

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

(V

GS

= 10V, T

A

= +25° (Note 6)

C)

(V

GS

= 10V, T

A

= +70° (Note 6)

C)

(V

GS

= 10V, T

A

= +25° (Note 5)

C)

Pulsed Drain Current (Note 7)

Continuous Source Current (Body Diode) (Note 6)

Pulsed Source Current (Body Diode) (Note 7)

Symbol

V

DSS

V

GSS

I

D

I

DM

I

S

I

SM

Value

30

±20

4.7

3.8

3.4

16

2.6

16

Unit

V

A

Thermal Characteristics

(@T

A

= +25° unless otherwise specified.)

C,

Characteristic

Power Dissipation at T

A

= +25° (Note 5)

C

Linear Derating Factor

Power Dissipation at T

A

= +25° (Note 6)

C

Linear Derating Factor

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Ambient (Note 6)

Operating and Storage Temperature Range

Symbol

P

D

P

D

R

θJA

R

θJA

T

J

,

T

STG

Value

2.0

16

3.9

31

62.5

32

-55 to +150

Unit

W

mW/°

C

W

mW/°

C

°

C/W

°

C/W

°

C

Electrical Characteristics

(@T

A

= +25° unless otherwise specified.)

C,

Symbol

BV

DSS

I

DSS

I

GSS

V

GS(TH)

R

DS(ON)

g

fs

V

SD

C

iss

C

oss

C

rss

t

D(ON)

t

R

t

D(OFF)

t

F

Q

g

Q

gs

Q

gd

t

RR

Q

RR

Min

30

—

1

—

1.1

—

Typ

—

380

90

30

2.9

5.6

11.7

6.4

—

18.8

11.4

Max

—

1

100

—

0.11

0.15

—

0.95

—

9.6

1.7

2.8

—

Unit

V

µA

nA

V

Ω

S

V

pF

ns

nC

ns

nC

Test Condition

V

GS

= 0V, I

D

= 250µA

V

DS

= 30V, V

GS

= 0V

V

GS

= ±20V, V

DS

= 0V

V

DS

= V

GS

, I

D

= 250µA

V

GS

= 10V, I

D

= 2.2A

V

GS

= 4.5V, I

D

= 1.1A

V

DS

= 15V, I

D

= 1.1A

T

J

= +25° I

S

= 2.2A,

C,

V

GS

= 0V

V

DS

= 25V, V

GS

= 0V,

f = 1.0MHz

Characteristic

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current T

J

= +25°

C

Gate-Source Leakage

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 8)

Forward Transconductance (Notes 8 & 10)

Diode Forward Voltage (Note 8)

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time (Note 9)

Turn-On Rise Time (Note 9)

Turn-Off Delay Time (Note 9)

Turn-Off Fall Time (Note 9)

Total Gate Charge (Note 9)

Gate-Source Charge (Note 9)

Gate-Drain Charge (Note 9)

Reverse Recovery Time

Reverse Recovery Charge

Notes:

V

DD

= 15V, I

D

= 2.2A, V

GS

= 10V,

R

GS

= 6Ω

V

DS

= 24V, V

GS

= 10V, I

D

= 2.2A

T

J

= +25° I

F

= 2.2A, di/dt =

C,

100A/µs

5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.

6. For a device surface mounted on FR-4 PCB measured at t ≤ 10 seconds.

7. Repetitive rating 25mm x 25mm FR-4 PCB, D = 0.05 pulse width limited by maximum junction temperature.

8. Measured under pulsed conditions. Width = 300µs. Duty cycle ≤ 2%.

9. Switching characteristics are independent of operating junction temperature.

10. For design aid only, not subject to production testing.

ZXM62N03G

Document number: DS33481 Rev. 4 - 3

2 of 7

www.diodes.com

January 2017

NOT RECOMMENDED FOR NEW DESIGN

USE DMN3032LE and ZXMN6A11G

ZXM62N03G

Document number: DS33481 Rev. 4 - 3

3 of 7

www.diodes.com

January 2017

NOT RECOMMENDED FOR NEW DESIGN

USE DMN3032LE and ZXMN6A11G

ZXM62N03G

Typical Characteristics

Ω

ZXM62N03G

Document number: DS33481 Rev. 4 - 3

4 of 7

www.diodes.com

January 2017

NOT RECOMMENDED FOR NEW DESIGN

USE DMN3032LE and ZXMN6A11G

ZXM62N03G

Typical Characteristics

(Cont.)

ZXM62N03G

Document number: DS33481 Rev. 4 - 3

5 of 7

www.diodes.com

January 2017

ZXM62N03G

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