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ZXM66P03N8

Description
6250 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size200KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

ZXM66P03N8 Overview

6250 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

ZXM66P03N8 Parametric

Parameter NameAttribute value
Number of terminals8
Minimum breakdown voltage30 V
Processing package descriptionSOIC-8
Lead-freeYes
EU RoHS regulationsYes
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeP channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeUniversal small signal
Maximum leakage current6.25 A
Maximum drain on-resistance0.0250 ohm
NOT RECOMMENDED FOR NEW DESIGN
USE
DMP3036SSS
ZXM66P03N8
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=-30V; R
DS(ON)
=0.025 ; I
D
=-7.9A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
SO8
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
DC - DC converters
Power management functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
ZXM66P03N8TA
ZXM66P03N8TC
REEL SIZE
7”
13”
TAPE WIDTH
12mm
12mm
QUANTITY
PER REEL
2 1
500 units
2500 units
S
S
S
D
D
D
3
4
DEVICE MARKING
ZXM
66P03
Top View
ISSUE 1 - JANUARY 2006
1
SEMICO NDUC T OR S
5
6
7
8

ZXM66P03N8 Related Products

ZXM66P03N8 ZXM66P03N8TC
Description 6250 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 6250 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of terminals 8 8
Minimum breakdown voltage 30 V 30 V
Processing package description SOIC-8 SOIC-8
Lead-free Yes Yes
EU RoHS regulations Yes Yes
state TRANSFERRED TRANSFERRED
packaging shape Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
terminal coating MATTE Tin MATTE Tin
Terminal location pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy
structure Single WITH BUILT-IN diode Single WITH BUILT-IN diode
Number of components 1 1
transistor applications switch switch
Transistor component materials silicon silicon
Channel type P channel P channel
field effect transistor technology Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT
Transistor type Universal small signal Universal small signal
Maximum leakage current 6.25 A 6.25 A
Maximum drain on-resistance 0.0250 ohm 0.0250 ohm
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