ZXMC4559DN8
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
Product Summary
Device
V
(BR)DSS
60V
-60V
R
DS(on) max
55mΩ @ V
GS
= 10V
105mΩ @ V
GS
= -10V
Features and Benefits
I
D
T
A
= +25°C
4.7A
-3.9A
•
•
•
•
•
•
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ADVANCE INFORMATION
NEW PRODUCT
Q2
Q1
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
•
•
•
•
•
•
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish annealed over Copper leadframe
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
Applications
•
•
•
DC-DC Converters
Power Management Functions
Backlighting
D2
S2
G2
S1
G1
TOP VIEW
Internal Schematic
D1
D2
D2
D1
D1
G2
S2
G1
S1
P-Channel MOSFET
Top View
N-Channel MOSFET
Ordering Information
(Note 4)
Part Number
ZXMC4559DN8TA
ZXMC4559DN8TC
Notes:
Compliance
Standard
Standard
Case
SO-8
SO-8
Packaging
500/Tape & Reel
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
ZXMC
4559
YY WW
1
4
ZXMC4559 = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
ZXMC4559DN8
Document number: DS34498 Rev. 7- 2
1 of 11
www.diodes.com
March 2014
© Diodes Incorporated
ZXMC4559DN8
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
DSS
V
GSS
SteadyState
(Note 5)
t<10s
(Note 6)
I
D
I
D
I
S
I
DM
I
SM
Value_Q2
60
±20
3.6
4.7
3.4
22.2
22.2
Value_Q1
-60
±20
-2.6
-3.9
-3.2
-18.3
-18.3
Units
V
V
A
A
A
A
A
ADVANCE INFORMATION
NEW PRODUCT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current V
GS
= 10V
Maximum Body Diode Forward Current at t<10s (Note 6)
Pulsed Drain Current (300µs pulse, duty cycle = 2%)
Pulsed Source Current (Body Diode) (300µs pulse, duty cycle = 2%)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Linear Derating Factor (Note 5)
Power Dissipation
Linear Derating Factor (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
P
D
P
D
R
θJA
R
θJA
T
J,
T
STG
Value
1.25
10
2.1
17
100
58
-55 to +150
Units
W
mW/°C
W
mW/°C
°C/W
°C
ZXMC4559DN8
Document number: DS34498 Rev. 7- 2
2 of 11
www.diodes.com
March 2014
© Diodes Incorporated
ZXMC4559DN8
Electrical Characteristics N-Channel Q2
(@T
A
= +25°C, unless otherwise specified.)
ADVANCE INFORMATION
NEW PRODUCT
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (V
GS
= 5.0V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
C
iss
C
oss
C
rss
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1063
104
64
11
20.4
4.1
5.1
3.5
4.1
26.2
10.6
22
21.4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
nS
nC
I
F
= 2.2A, di/dt = 100A/μs
I
F
= 2.2A, di/dt = 100A/μs
nS
V
DD
= 30V, I
D
= 1.0A
V
GS
= 10V, R
G
= 6.0Ω
nC
V
DS
= 30V, I
D
= 4.5A
pF
V
DS
= 30V, V
GS
= 0V,
f = 1.0MHz
V
GS(th)
R
DS(ON)
V
SD
g
fs
1.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.85
10.2
⎯
55
75
1.2
⎯
V
mΩ
V
S
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 4.5A
V
GS
= 4.5V, I
D
= 4.0A
V
GS
= 0V, I
S
= 5.5A
V
DS
=15V,I
D
=4.5A
Symbol
BV
DSS
I
DSS
I
GSS
Min
60
⎯
⎯
Typ
⎯
⎯
⎯
Max
⎯
1.0
±100
Unit
V
µA
nA
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
ZXMC4559DN8
Document number: DS34498 Rev. 7- 2
4 of 11
www.diodes.com
March 2014
© Diodes Incorporated
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