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ZXMN2A01F

Description
1900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size366KB,7 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

ZXMN2A01F Overview

1900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

ZXMN2A01F Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage20 V
Processing package descriptionSOT-23, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeUniversal small signal
Maximum leakage current1.9 A
Maximum drain on-resistance0.1200 ohm
ZXMN2A01F
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
20V
R
DS(ON)
0.12Ω @ V
GS
= 10V
I
D
T
A
= +25°C
2.2A
Features
Low On-Resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ADVANCED INFORMATION
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Mechanical Data
Applications
DC-DC Converters
Power Management Functions
Motor Control
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208
e3
Lead-free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
D
D
G
G
S
Top View
Top View
Pin Configuration
S
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
ZXMN2A01FTA
ZXMN2A01FTC
Notes:
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
7N2
7N2 = Product Type Marking Code
ZXMN2A01F
Document number: DS33513 Rev. 4 - 2
1 of 7
www.diodes.com
August 2014
© Diodes Incorporated

ZXMN2A01F Related Products

ZXMN2A01F ZXMN2A01FTC
Description 1900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 1900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of terminals 3 3
Minimum breakdown voltage 20 V 20 V
Processing package description SOT-23, 3 PIN SOT-23, 3 PIN
Lead-free Yes Yes
EU RoHS regulations Yes Yes
state TRANSFERRED TRANSFERRED
packaging shape Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
terminal coating MATTE Tin MATTE Tin
Terminal location pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy
structure Single WITH BUILT-IN diode Single WITH BUILT-IN diode
Number of components 1 1
transistor applications switch switch
Transistor component materials silicon silicon
Channel type N channel N channel
field effect transistor technology Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT
Transistor type Universal small signal Universal small signal
Maximum leakage current 1.9 A 1.9 A
Maximum drain on-resistance 0.1200 ohm 0.1200 ohm
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