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ZXMN2A02X8

Description
7600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size682KB,7 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric View All

ZXMN2A02X8 Overview

7600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

ZXMN2A02X8 Parametric

Parameter NameAttribute value
Number of terminals8
Minimum breakdown voltage20 V
Processing package descriptionMSOP-8
Lead-freeYes
EU RoHS regulationsYes
stateTRANSFERRED
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Maximum leakage current7.6 A
Maximum drain on-resistance0.0200 ohm
Not Recommended for New Design
Use DMN3025LSS
ZXMN2A02X8
20V N-CHANNEL ENHANCEMENT MODE MOSFET
N
O
T
FO R
R EC
N O
EW M
M
D EN
ES D
IG ED
N
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SUMMARY
V
(BR)DSS
= 20V; R
DS(ON)
= 0.02
I
D
= 7.8A
MSOP8
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
7”
PINOUT
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
1000 units
4000 units
ZXMN2A02X8TA
ZXMN2A02X8TC
13”
DEVICE MARKING
ZXMN
2A02
Top View
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