Green
ZXMN0545G4
450V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
50Ω @ V
GS
= 10V
I
D
T
A
= +25°
C
140mA
Features and Benefits
High Voltage
Low On-resistance
Fast Switching Speed
Low Gate Drive
Low Threshold
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
450V
Description
This new generation trench MOSFET features a unique structure
combining the benefits of low on-resistance and fast switching,
making it ideal for high efficiency power management applications.
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound; UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.112 grams (Approximate)
Applications
Off-line Power Supply Start-up Circuitry
SOT223
D
N/C
G
S
Top View
Pin Out - Top
View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
ZXMN0545G4TA
ZXMN0545G4TC
Notes:
Marking
ZXMN0545
ZXMN0545
Reel size (inches)
7
13
Tape width (mm)
12
12
Quantity per reel
1,000
4,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
ZVN
ZXMN
0545
4310
ZXMN0545 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5 = 2015)
WW or WW = Week Code (01~53)
YWW
ZXMN0545G4
Document number: DS33571 Rev. 2 - 2
1 of 6
www.diodes.com
March 2015
© Diodes Incorporated
ZXMN0545G4
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (V
GS
= 10V; T
A
= +25° (Note 5)
C)
Pulsed Drain Current (Note 7)
Continuous Source Current (Body Diode) (Note 6)
Pulsed Source Current (Body Diode) (Note 7)
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
I
SM
Value
450
±20
140
600
140
600
Unit
V
V
mA
mA
mA
mA
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Power Dissipation at T
A
= +25° (Note 5)
C
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
R
θJA
T
J
,
T
STG
Value
2.0
1.6
62.5
32
-55 to +150
Unit
W
mW/°
C
°
C/W
°
C/W
°
C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
(@T
A
= +25° unless otherwise specified.)
C,
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
g
fs
I
D(ON)
C
iss
C
oss
C
rss
t
D(ON)
t
R
t
D(OFF)
t
F
Min
450
-
-
1
-
100
150
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
10
400
20
3
50
-
-
70
10
4
7
7
16
10
Unit
V
µA
nA
V
Ω
mS
mA
pF
pF
pF
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 1mA
V
DS
= 450V, V
GS
= 0V
V
DS
= 405V, V
GS
= 0V, T = +125°
C
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 1mA
V
GS
= 10V, I
D
= 100mA
V
DS
= 25V, I
D
= 100mA
V
DS
= 25V, V
GS
= 10V
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 10)
On-State Drain Current (Note 8)
DYNAMIC CHARACTERISTICS
(Note 11)
Input Capacitance (Note 10)
Output Capacitance (Note 10)
Reverse Transfer Capacitance (Note 10)
Turn-On Delay Time (Notes 9 & 10)
Turn-On Rise Time (Notes 9 & 10)
Turn-Off Delay Time (Notes 9 & 10)
Turn-Off Fall Time (Notes 9 & 10)
Notes:
V
DD
= 25V, I
D
= 100mA
5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.
7. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
9. Switching characteristics are independent of operating junction temperature.
10. Sample test.
11. For design aid only, not subject to production testing.
ZXMN0545G4
Document number: DS33571 Rev. 2 - 2
2 of 6
www.diodes.com
March 2015
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
