A Product Line of
Diodes Incorporated
ZXMN10A11K
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
350mΩ @ V
GS
= 10V
100V
450mΩ @ V
GS
= 6V
3.1A
I
D
T
A
= 25°C
3.5A
Features and Benefits
•
•
•
•
Fast switching speed
Low input capacitance
“Green” Component and RoHS compliant (Note 1)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
•
•
•
•
Motor control
DC-DC Converters
Power management functions
Uninterrupted power supply
•
•
•
•
•
•
Case: TO252-3L
Case Material: Molded Plastic “Green” Molding Compound,
UL Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (approximate)
D
TO252-3L
D
G
D
G
Top View
S
S
Equivalent Circuit
Pin Out – Top View
Ordering Information
Product
ZXMN10A11KTC
Note:
(Note 1)
Marking
See Below
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
2,500
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
ZXMN
10A11
YYWW
ZXMN = Product Type Marking Code, Line 1
10A11 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
ZXMN10A11K
Document Number DS32058 Rev. 2 - 2
1 of 8
www.diodes.com
January 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN10A11K
Maximum Ratings
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
@T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
GS
(Note 3)
T
A
= 70°C (Note 3)
(Note 2)
(Note 4)
(Note 3)
(Note 4)
I
D
I
DM
I
S
I
SM
Value
100
±20
3.5
2.8
2.4
9.9
8.4
9.9
Unit
V
V
A
A
A
A
Characteristic
V
GS
= 10V
Pulsed Drain current
V
GS
= 10V
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
(Note 2)
Value
4.06
32.4
8.5
68.0
2.11
16.8
30.8
14.7
59.1
1.10
-55 to 150
Unit
Characteristic
Power dissipation
Linear derating factor
(Note 3)
(Note 6)
P
D
W
mW/°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
(Note 2)
(Note 3)
(Note 6)
(Note 5)
R
θ
JA
R
θ
JL
T
J
, T
STG
°C/W
°C/W
°C
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t
≤
10 sec.
4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with the high coverage single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
ZXMN10A11K
Document Number DS32058 Rev. 2 - 2
2 of 8
www.diodes.com
January 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN10A11K
Thermal Characteristics
10
I
D
Drain Current (A)
R
DS(on)
10
R
DS(on)
Limited
I
D
Drain Current (A)
Limited
1
DC
1s
100ms
T
amb
=25°C
10ms
1ms
100µs
1
DC
1s
100ms
T
amb
=25°C
10ms
1ms
100µs
100m
100m
10m
25mm x 25mm
1oz FR4
10m
100
50mm x 50mm
2oz FR4
1
10
1
10
100
V
DS
Drain-Source Voltage (V)
V
DS
Drain-Source Voltage (V)
Safe Operating Area
Thermal Resistance (°C/W)
60
50
40
D=0.5
T
amb
=25°C
25mm x 25mm
1oz FR4
Safe Operating Area
Thermal Resistance (°C/W)
35
30
25
20
15
10
5
0
100µ
1m
10m 100m
1
D=0.2
D=0.1
D=0.05
Single Pulse
T
amb
=25°C
50mm x 50mm
2oz FR4
D=0.5
30
20
10
0
100µ
1m
10m 100m
1
D=0.2
D=0.1
D=0.05
Single Pulse
10
100
1k
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Max Power Dissipation (W)
Single Pulse
T
amb
=25°C
50mm x 50mm
2oz FR4
Transient Thermal Impedance
Max Power Dissipation (W)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20
40
60
80
100 120 140 160
50mm x 50mm
2oz FR4
25mm x 25mm
1oz FR4
100
10
25mm x 25mm
1oz FR4
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Temperature (°C)
Pulse Power Dissipation
Derating Curve
ZXMN10A11K
Document Number DS32058 Rev. 2 - 2
3 of 8
www.diodes.com
January 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN10A11K
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
@T
A
= 25°C unless otherwise specified
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
fs
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
100
⎯
⎯
2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
4
0.850
26
30
274
21
11
3.5
5.4
1.4
1.5
2.7
1.7
7.4
3.5
Max
⎯
1
±100
4
0.350
0.450
⎯
0.950
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
µA
nA
V
Ω
S
V
ns
nC
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
I
D
= 250μA, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
I
D
= 250μA, V
DS
= V
GS
V
GS
= 10V, I
D
= 2.6A
V
GS
= 6V, I
D
= 1.3A
V
DS
= 15V, I
D
= 2.6A
I
S
= 1.85A, V
GS
= 0V
I
S
= 1.0A, di/dt = 100A/μs
Static Drain-Source On-Resistance (Note 7)
Forward Transconductance (Notes 7 & 8)
Diode Forward Voltage (Note 7)
Reverse recovery time (Note 8)
Reverse recovery charge (Note 8)
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 9)
Total Gate Charge (Note 9)
Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
Notes:
V
DS
= 50V, V
GS
= 0V
f = 1MHz
V
GS
= 6V
V
GS
= 10V
V
DS
= 50V,
I
D
= 2.5A
V
DD
= 50V, V
GS
= 10V
I
D
= 1.0A, R
G
≅
6Ω
7. Measured under pulsed conditions. Pulse width
≤
300μs; duty cycle
≤
2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.
ZXMN10A11K
Document Number DS32058 Rev. 2 - 2
4 of 8
www.diodes.com
January 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN10A11K
Typical Characteristics
10
T = 25°C
10V
10
T = 150°C
10V
5V
4.5V
I
D
Drain Current (A)
1
4.5V
4V
I
D
Drain Current (A)
5V
1
4V
3.5V
0.1
V
GS
3.5V
0.1
3V
V
GS
2.5V
0.01
0.1
1
10
0.01
0.1
1
10
V
DS
Drain-Source Voltage (V)
V
DS
Drain-Source Voltage (V)
Output Characteristics
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
Output Characteristics
Normalised R
DS(on)
and V
GS(th)
V
GS
= 10V
I
D
= 2.6A
R
DS(on)
I
D
Drain Current (A)
1
T = 150°C
T = 25°C
V
GS(th)
V
GS
= V
DS
I
D
= 250uA
V
DS
= 10V
0.1
3
4
5
0
50
100
150
V
GS
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance
(Ω)
100
V
GS
4.5V
5V
3.5V
4V
Normalised Curves v Temperature
10
I
SD
Reverse Drain Current (A)
T = 150°C
10
1
T = 25°C
1
10V
0.1
T = 25°C
0.1
0.01
0.01
0.1
1
10
0.4
0.6
0.8
1.0
On-Resistance v Drain Current
I
D
Drain Current (A)
V
SD
Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
ZXMN10A11K
Document Number DS32058 Rev. 2 - 2
5 of 8
www.diodes.com
January 2010
© Diodes Incorporated
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