BULD138
HIGH VOLTAGE FAST SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
s
s
s
s
s
s
s
SGS-THOMSON PREFERRED SALESTYPE
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERISED AT 125
o
C
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
3
1
IPAK
(TO-251)
(Suffix ”-1”)
2
s
APPLICATIONS
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The BULD138 is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
C ES
V
CEO
V
EBO
I
C
I
CM
I
B
I
B M
P
tot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25 C
Storage Temperature
Max. Operating Junction Temperature
o
Value
800
400
9
5
8
2
4
30
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
o
C
C
1/6
January 1995
BULD138
THERMAL DATA
R
thj-cas e
R
thj- amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
4.16
100
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CE S
I
CEO
Parameter
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
B
= 0)
Test Conditions
V
CE
= 800 V
V
CE
= 800 V
V
CE
= 400 V
I
C
= 100 mA
I
E
= 10 mA
I
C
= 1 A
I
C
= 2 A
I
C
= 3 A
I
C
= 1 A
I
C
= 2 A
I
C
= 3 A
I
B
= 0.2 A
I
B
= 0.4 A
I
B
= 0.6 A
I
B
= 0.2 A
I
B
= 0.4 A
I
B
= 0.6 A
V
C E
= 5 V
V
CE
= 5 V
I
B1
= 0.4 A
R
BB
= 0
Ω
L = 200
µH
I
B1
= 0.4 A
R
BB
= 0
Ω
L = 200
µH
8
10
0.7
50
1
75
1.4
100
µs
ns
µs
ns
L = 25 mH
400
9
0.5
0.7
1
1.1
1.3
1.5
T
j
= 125 C
o
Min.
Typ.
Max.
100
500
250
Unit
µA
µA
µA
V
V
V
V
V
V
V
V
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
EBO
V
CE (sat)
∗
Emitter-Base Voltage
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
INDUCTIVE LOAD
Storage Time
Fall Time
INDUCTIVE LOAD
Storage Time
Fall Time
V
B E(sat)
∗
h
FE
∗
I
C
= 2 A
I
C
= 10 mA
t
s
t
f
t
s
t
f
I
C
= 2 A
V
BE (off)
= -5 V
V
CL
= 250 V
I
C
= 2 A
V
BE (off)
= -5V
V
CL
= 250 V
T
j
= 125
o
C
∗
Pulsed: Pulse durati on = 300
µs,
duty cycle 1.5 %
Safe Operating Areas
Derating Curves
2/6
BULD138
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Inductive Fall Time
Inductive Storage Time
3/6
BULD138
Reverse Biased SOA
RBSOA and Inductive Load Switching Test
Circuit
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
4/6
BULD138
TO-251 (IPAK) MECHANICAL DATA
DIM.
MIN.
A
A1
A3
B
B2
B3
B5
B6
C
C2
D
E
G
H
L
L1
L2
0.45
0.48
6
6.4
4.4
15.9
9
0.8
0.8
0.3
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
0.031
2.2
0.9
0.7
0.64
5.2
mm
TYP.
MAX.
2.4
1.1
1.3
0.9
5.4
0.85
0.012
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
MIN.
0.086
0.035
0.027
0.025
0.204
inch
TYP.
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
H
C
A
C2
L2
D
B3
B6
A1
L
=
=
3
B5
B
A3
=
B2
=
G
=
E
L1
1
2
=
0068771-E
5/6
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