ZXMN3A04DN8
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= 30V; R
DS(ON)
= 0.02
DESCRIPTION
; I
D
= 8.5A
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
SO8
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE
ZXMN3A04DN8TA
ZXMN3A04DN8TC
REEL
7
’‘
13’‘
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
500 units
2500 units
PINOUT
DEVICE MARKING
ZXMN
3A04D
Top view
ISSUE 2 - OCTOBER 2002
1
ZXMN3A04DN8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current (V
GS
=10V; T
A
=25°C)(b)(d)
(V
GS
=10V; T
A
=70°C)(b)(d)
(V
GS
=10V; T
A
=25°C)(a)(d)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at T
A
=25°C (a)(d)
Linear Derating Factor
Power Dissipation at T
A
=25°C (a)(e)
Linear Derating Factor
Power Dissipation at T
A
=25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
LIMIT
30
20
8.5
6.8
6.5
39
3.6
39
1.25
10
1.81
14.5
2.15
17.2
-55 to +150
UNIT
V
V
A
I
DM
I
S
I
SM
P
D
P
D
P
D
T
j
:T
stg
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)(d)
Junction to Ambient (b)(e)
Junction to Ambient (b)(d)
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t
10 sec.
SYMBOL
R
θJA
R
θJA
R
θJA
VALUE
100
69
58
UNIT
°C/W
°C/W
°C/W
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. Refer to Trnsient
Thermal Impedance Graph.
(d) For a dual device with one active die.
ISSUE 2 - OCTOBER 2002
2
ZXMN3A04DN8
CHARACTERISTICS
ISSUE 2 - OCTOBER 2002
3
ZXMN3A04DN8
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
SYMBOL
MIN.
30
TYP.
MAX.
UNIT CONDITIONS.
V
I
D
=250µA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I =250µA, V
DS
= V
GS
D
V
GS
=10V, I
D
=12.6A
V
GS
=4.5V, I
D
=10.6A
V
DS
=15V,I
D
=12.6A
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
V
SD
t
rr
Q
rr
0.5
100
1.0
0.02
0.03
22.1
1890
349
218
5.2
6.1
38.1
20.2
19.9
36.8
5.8
7.1
0.85
18.4
11
0.95
µA
nA
V
Ω
Ω
S
pF
pF
pF
V
DS
=15V, V
GS
=0V,
f=1MHz
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=15V,V
GS
=10V,
I
D
=6.5A
V
DS
=15V,V
GS
=5V,
I
D
=6.5A
V
DD
=15V, I
D
=1A
R
G
=6.0Ω, V
GS
=10V
V
ns
nC
T
J
=25°C, I
S
=6.8A,
V
GS
=0V
T
J
=25°C, I
F
=2.3A,
di/dt= 100A/µs
ISSUE 2 - OCTOBER 2002
4
ZXMN3A04DN8
TYPICAL CHARACTERISTICS
ISSUE 2 - OCTOBER 2002
5
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