ZXMN3F31DN8
30V SO8 dual N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
30
R
DS(on)
(Ω)
0.024 @ V
GS
= 10V
0.039 @ V
GS
= 4.5V
I
D
(A)
7.3
5.7
Description
This new generation Trench MOSFET from Zetex features low on-
resistance achievable with 4.5V gate drive.
Features
•
•
Low on-resistance
4.5V gate drive capability
D1
D2
Applications
•
•
•
•
•
DC-DC Converters
Power management functions
Load switching
Motor control
Back lighting
G1
S1
G2
S2
S1
G1
S2
Tape width
(mm)
12
Quantity
per reel
500
D1
D1
D2
D2
Ordering information
DEVICE
ZXMN3F31DN8TA
Reel size
(inches)
7
G2
Device marking
ZXMN
3F31D
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com
ZXMN3F31DN8
Absolute maximum ratings
Parameter
Drain source voltage
Gate source voltage
Continous Drain Current @ V
GS
=10; T
A
=25°C
(b)
@ V
GS
=10; T
A
=70°C
(b)
@ V
GS
=10; T
A
=25°C
(a)
Pulsed drain current
(c)
Continuous source current (body diode)
(b)
Pulsed source current (body diode)
(c)
Power dissipation at T
A
=25°C
(a)(d)
Linear derating factor
Power dissipation at T
A
=25°C
(a)(e)
Linear derating factor
Power dissipation at T
A
=25°C
(b)(d)
Linear derating factor
Operating and storage temperature range
T
j
, T
stg
P
D
P
D
Symbol
V
DSS
V
GS
I
D
Limit
30
±20
7.3
5.9
5.7
33
3.5
33
1.25
10
1.8
14
2.1
17
-55 to 150
Unit
V
V
A
A
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
I
DM
I
S
I
SM
P
D
Thermal resistance
Parameter
Junction to ambient
(a)(d)
Junction to ambient
(a)(e)
Junction to ambient
(b)(d)
Junction to lead
(f)
Symbol
R
JA
R
JA
R
JA
R
JL
Limit
100
70
60
53
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t
≤
10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300μs - pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
(f) Thermal resistance from junction to solder-point (at end of drain lead).
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
2
www.zetex.com
ZXMN3F31DN8
Thermal characteristics
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
3
www.zetex.com
ZXMN3F31DN8
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Static
Drain-Source breakdown
voltage
Zero Gate voltage drain
current
Gate-Body leakage
Gate-Source threshold
voltage
Static Drain-Source
on-state resistance
(*)
Forward
transconductance
(*)(†)
Dynamic
(†)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Switching
(‡)(†)
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Diode Forward Voltage
(*)
Reverse recovery time
(†)
V
SD
t
rr
0.82
12
4.8
1.2
V
ns
nC
T
j
=25°C, I
S
= 1.7A,
V
GS
=0V
T
j
=25
o
C, I
S
=2.2A
di/dt=100A/ s
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
2.9
3.3
16
8
12.9
2.5
2.52
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15V, V
GS
= 10V
I
D
= 7A
V
DD
= 15V, I
D
= 1A
R
G
≅
6.0Ω, V
GS
=10V
C
iss
C
oss
C
rss
608
132
71
pF
pF
pF
V
DS
= 15V, V
GS
=0V
f=1MHz
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
16.5
1.0
30
0.5
100
3.0
0.024
0.039
V
μA
nA
V
Ω
Ω
S
I
D
= 250μA, V
GS
=0V
V
DS
= 30V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I
D
= 250μA, V
DS
=V
GS
V
GS
= 10V, I
D
= 7.0A
V
GS
= 4.5V, I
D
= 6.0A
V
DS
= 15V, I
D
= 7A
Symbol
Min.
Typ.
Max.
Unit
Conditions
Reverse recovery charge
(†)
Q
rr
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤
300μs; duty cycle
≤2%.
(†) For design aid only, not subject to production testing
(‡) Switching characteristics are independent of operating junction temperature.
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
4
www.zetex.com
ZXMN3F31DN8
Typical characteristics
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
5
www.zetex.com
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