ZXMN4A06K
40V N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
= -40V; R
DS(ON)
= 0.05 ; I
D
= 10.9A
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage,
power management applications.
Features
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
DPAK package
D
G
S
Applications
•
•
•
•
DC - DC converters
Audio output stages
Relay and solenoid driving
Motor control
Ordering information
Device
ZXMN4A06KTC
Reel size
(inches)
13
Tape width
(mm)
16
Quantity
per reel
2,500
Device marking
ZXMN
4A06
Pinout - Top view
Issue 1 - March 2006
© Zetex Semiconductors plc 2005
1
www.zetex.com
ZXMN4A06K
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current:
V
GS
=10V; T
A
=25°C
(b)
V
GS
=10V; T
A
=70°C
(b)
V
GS
=10V; T
A
=25°C
(a)
Pulsed drain current
(c)
Continuous source current (body diode)
(b)
Symbol
V
DSS
V
GS
Limit
40
20
10.9
Unit
V
V
A
A
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
I
D
8.7
7.2
I
DM
I
S
I
SM
P
D
P
D
P
D
35.3
10.8
35.3
4.2
33.6
9.5
76
2.15
17.2
-55 to +150
Pulsed source current (body diode)
(c)
Power dissipation at T
A
=25°C
(a)
Linear derating factor
Power dissipation at T
A
=25°C
(b)
Linear derating factor
Power dissipation at T
A
=25°C
(d)
Linear derating factor
Operating and storage temperature range T
j
:T
stg
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Junction to ambient
(d)
Symbol
R
JA
R
JA
R
JA
Value
30
13.2
58
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum
junction temperature.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Issue 1 - March 2006
© Zetex Semiconductors plc 2005
2
www.zetex.com
ZXMN4A06K
Characteristics
Issue 1 - March 2006
© Zetex Semiconductors plc 2005
3
www.zetex.com
ZXMN4A06K
Electrical characteristics (at T
A
= 25°C unless otherwise stated)
Parameter
Static
Drain-source breakdown
voltage
Gate-body leakage
V
(BR)DSS
40
1
100
1.0
0.050
0.075
g
fs
11.5
S
V
A
nA
V
I
D
=250 A, V
GS
=0V
V
DS
=40V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I
D
=250 A, V
DS
= V
GS
V
GS
=10V, I
D
=4.5A
V
GS
=4.5V, I
D
=3.2A
V
DS
=15V,I
D
=4.5A
Symbol
Min.
Typ.
Max.
Unit
Conditions
Zero gate voltage drain current I
DSS
I
GSS
R
DS(on)
Gate-source threshold voltage V
GS(th)
Static drain-source on-state
resistance
(*)
Forward transconductance
(‡)
Dynamic
(‡)
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
(†) (‡)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Source-drain diode
Diode forward voltage
(*)
Reverse recovery time
(†)
Reverse recovery charge
(‡)
V
SD
0.83
16
9
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
3.2
3.8
23.3
10.9
17.1
2.41
3.4
C
iss
C
oss
C
rss
827
133
84
pF
pF
pF
V
DS
=20 V, V
GS
=0V,
f=1MHz
ns
ns
ns
ns
nC
nC
nC
V
DS
=20V,V
GS
=10V,
I
D
=4.5A
(refer to test circuit)
V
DD
=20V, I
D
=1A
R
G
=6.0
, V
GS
=10V
(refer to test circuit)
0.95
V
ns
nC
T
J
=25°C, I
S
=4.5A,
V
GS
=0V
T
J
=25°C, I
F
=4A,
di/dt= 100A/ s
t
rr
Q
rr
NOTES:
(*) Measured under pulsed conditions. Width 300 s. Duty cycle 2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 1 - March 2006
© Zetex Semiconductors plc 2005
4
www.zetex.com
ZXMN4A06K
Typical charactersitics
Issue 1 - March 2006
© Zetex Semiconductors plc 2005
5
www.zetex.com
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