ZXMN6A08G
60V SOT223 N-channel enhancement mode MOSFET
Product Summary
BV
DSS
R
DS(on)
( )
0.08 @ V
GS
= 10V
0.15 @ V
GS
= 4.5V
I
D
(A)
5.3
2.8
Features and Benefits
•
•
•
•
•
•
•
Low On-Resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ADVANCE INFORMATION
NEW PRODUCT
60V
Description and Applications
This MOSFET features a unique structure combining the benefits of
low on-resistance and fast switching, making it ideal for high-
efficiency power management applications.
• DC-DC Converters
• Power Management Functions
• Disconnect Switches
• Motor Control
Mechanical Data
•
•
•
•
•
Case: SOT223
Case Material: Molded Plastic.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208
Weight: 0.112 grams (Approximate)
SOT223
Top View
Pin Out - Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
ZXMN6A08GTA
ZXMN6A08GTC
Notes:
Marking
ZXMN6A08
ZXMN6A08
Reel size (inches)
7
13
Tape width (mm)
12
12
Quantity per reel
1,000
4,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
ZXMN6A08 =Product Type Marking Code
YWW = Date Code Marking
Y or Y= Last Digit of Year (ex: 5 = 2015)
WW or WW = Week Code (01 - 53)
ZXMN6A08G
Document Number DS33550 Rev. 2 - 2
1 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZXMN6A08G
Absolute Maximum Ratings
Characteristic
Drain-Source Voltage
Gate-Source Voltage
T
A
= +25° (Note 6)
C
Continuous Drain Current
V
GS
= 10V
T
A
= +70° (Note 6)
C
T
A
= +25° (Note 5)
C
Pulsed Drain Current (Note 7)
Continuous Source Current (body diode)( Note 6)
Pulsed Source Current (body diode)( Note 7)
Power Dissipation at T
A
= +25° (Note 5)
C
Linear Derating Factor
Power Dissipation at T
A
= +25° (Note 6)
C
Linear Derating Factor
Linear Derating Factor
I
DM
I
S
I
SM
P
D
P
D
T
J
, T
STG
I
D
Symbol
V
DSS
V
GSS
Value
60
±20
5.3
4.2
3.8
20
2.1
20
2
16
3.9
31
-55 to +150
Unit
V
V
A
A
A
A
A
A
W
mW/°
C
W
mW/°
C
°
C
ADVANCE INFORMATION
NEW PRODUCT
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Junction to Ambient (Note 5)
Junction to Ambient (Note 6)
Symbol
R
θJA
R
θJA
Value
62.5
32
Units
°
C/W
°
C/W
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance (Note 8)
Forward Transconductance (Notes 8 &10)
DYNAMIC CHARACTERISTICS
(Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
Gate Charge (Note 9)
Total Gate Charge (Note 9)
Gate-Source Charge (Note 9)
Gate Drain Charge (Note 9)
SOURCE-DRAIN DIODE
Diode Forward Voltage (Note 8)
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
fs
Min
60
−
−
1
−
−
−
Typ
−
−
−
−
−
−
6.6
Max
−
0.5
100
-
0.08
0.15
−
−
−
−
−
−
−
−
−
−
−
−
Unit
V
µA
nA
V
Test Condition
V
GS
= 0V, I
D
=250µA
V
DS
= 60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 4.8A
V
GS
= 4.5V, I
D
= 4.2A
V
DS
=15V,I
D
=4.8A
S
Qg
Qg
Qgs
Qgd
−
−
−
−
4.0
5.8
1.4
1.9
nC
nC
nC
nC
V
DS
= 30V, V
GS
= 5V
I
D
= 1.4A
V
DS
= 30V, V
GS
= 10V
I
D
= 1.4A
V
SD
trr
Qrr
−
−
−
0.88
19.2
30.3
1.2
−
−
V
ns
nC
Tj=+25° I
S
= 4A,
C,
V
GS
=0V
Tj=+25° I
S
= 1.4A,
C,
di/dt=100A/µs
5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR4 PCB measured at t
<=
10 sec.
7. Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300_s - pulse width limited by maximum junction temperature.
8. Measured under pulsed conditions. Pulse width <= 300_s; duty cycle <=2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
ZXMN6A08G
Document Number DS33550 Rev. 2 - 2
2 of 7
www.diodes.com
≅
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
−
−
−
−
−
−
−
459
44.2
24.1
2.6
2.1
12.3
4.6
pF
pF
pF
ns
ns
ns
ns
V
DS
= 40V, V
GS
= 0V,
f = 1MHz
V
DD
= 30V, I
D
=1.5A
RG 6.0 , V
GS
= 10V
March 2015
© Diodes Incorporated
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