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BUP60

Description
6.8A, 350V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
CategoryDiscrete semiconductor    The transistor   
File Size74KB,1 Pages
ManufacturerSEMELAB
Download Datasheet Parametric View All

BUP60 Overview

6.8A, 350V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3

BUP60 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSEMELAB
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codecompliant
ConfigurationSINGLE
Minimum drain-source breakdown voltage350 V
Maximum drain current (ID)6.8 A
Maximum drain-source on-resistance1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
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