ZXMP3A16DN8
DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= -30V; R
DS(ON)
= 0.045 ; I
D
= -5.5A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
SO8
APPLICATIONS
•
Motor Drive
•
LCD backlighting
ORDERING INFORMATION
DEVICE
ZXMP3A16DN8TA
ZXMP3A16DN8TC
REEL
7
’‘
13’‘
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
500 units
2500 units
PINOUT
DEVICE MARKING
ZXMP
3A16
Top view
ISSUE 2 - MAY 2007
1
ZXMP3A16DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current@V
GS
=10V; T
A
=25 C
(b)(d)
@V
GS
=10V; T
A
=70 C
(b)(d)
@V
GS
=10V; T
A
=25 C
(a)(d)
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
(b)
Pulsed Source Current (Body Diode)
(c)
Power Dissipation at T
A
=25°C
(a)(d)
Linear Derating Factor
Power Dissipation at T
A
=25°C
(a)(e)
Linear Derating Factor
Power Dissipation at T
A
=25°C
(b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
LIMIT
-30
20
-5.5
-4.4
-4.2
-20
-3.2
-20
1.25
10
1.8
14
2.1
17
-55 to +150
UNIT
V
V
A
A
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
I
DM
I
S
I
SM
P
D
P
D
P
D
T
j
:T
stg
THERMAL RESISTANCE
PARAMETER
Junction to Ambient
(a)(d)
Junction to Ambient
(b)(e)
Junction to Ambient
(b)(d)
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t
10 sec.
SYMBOL
R
θJA
R
θJA
R
θJA
VALUE
100
70
60
UNIT
°C/W
°C/W
°C/W
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
ISSUE 2 - MAY 2007
2
ZXMP3A16DN8
CHARACTERISTICS
Max Power Dissipation (W)
-I
D
Drain Current (A)
R
DS(on)
10
Limited
1
DC
1s
100ms
Single Pulse
T
amb
=25°C
One active die
10ms
1ms
100µs
100m
10m
100m
-V
DS
Drain-Source Voltage (V)
1
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
Two active die
One active die
20
40
60
80 100 120 140 160
Temperature (°C)
Safe Operating Area
110
T
amb
=25°C
100
One active die
90
80
70
60
D=0.5
50
40
Single Pulse
30
D=0.2
20
D=0.05
10
D=0.1
0
100µ 1m 10m 100m 1
10 100 1k
Derating Curve
Single Pulse
T
amb
=25°C
One active die
Thermal Resistance (°C/W)
MaximumPower (W)
100
10
1
100µ 1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ISSUE 2 - MAY 2007
3
ZXMP3A16DN8
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
-1.0
0.045
0.070
9.2
S
-30
-1.0
100
V
A
nA
V
I
D
=-250μA, V
GS
=0V
V
DS
=-30V, V
GS
=0V
V
GS
= 20V, V
DS
=0V
I =-250 A,
D
V
DS
= V
GS
V
GS
=-10V, I
D
=-4.2A
V
GS
=-4.5V, I
D
=-3.4A
V
DS
=-15V,I
D
=-4.2A
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
Forward Transconductance
(1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
Reverse Recovery Time
(3)
Reverse Recovery Charge
(3)
V
SD
t
rr
Q
rr
-0.85
21.7
16.1
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
3.8
6.5
37.1
21.4
17.2
29.6
2.8
8.6
C
iss
C
oss
C
rss
1022
267
229
g
fs
pF
pF
pF
V
DS
=-15 V, V
GS
=0V,
f=1MHz
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=-15V,V
GS
=-10V,
I
D
=-4.2A
V
DS
=-15V,V
GS
=-5V,
I
D
=-4.2A
V
DD
=-15V, I
D
=-1A
R
G
=6.0Ω, V
GS
=-10V
-0.95
V
ns
nC
T
J
=25°C, I
S
=-3.6A,
V
GS
=0V
T
J
=25°C, I
F
=-2A,
di/dt= 100A/μs
NOTES
(1) Measured under pulsed conditions. Width
≤300μs.
Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - MAY 2007
4
ZXMP3A16DN8
TYPICAL CHARACTERISTICS
T = 25°C
10V
4V
-I
D
Drain Current (A)
10
-I
D
Drain Current (A)
3.5V
3V
2.5V
2V
-V
GS
T = 150°C
10V
4V
10
3.5V
3V
2.5V
2V
1.5V
1
1
-V
GS
0.1
1.5V
0.1
0.01
0.1
-V
DS
Drain-Source Voltage (V)
1
10
0.01
0.1
-V
DS
Drain-Source Voltage (V)
1
10
Output Characteristics
1.6
T = 150°C
T = 25°C
Output Characteristics
V
GS
= -10V
I
D
= -4.2A
R
DS(on)
Normalised R
DS(on)
and V
GS(th)
10
-I
D
Drain Current (A)
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
1
V
GS(th)
V
GS
= V
DS
I
D
= -250uA
-V
DS
= 10V
0.1
1
2
3
50
100
150
-V
GS
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
100
R
DS(on)
Drain-Source On-Resistance
(Ω)
-I
SD
Reverse Drain Current (A)
Normalised Curves v Temperature
100
10
1
0.1
0.01
0.01
1.5V
-V
GS
2V
T = 25°C
T = 150°C
10
1
0.1
T = 25°C
2.5V
3V
3.5V
4V
10V
0.1
1
10
0.01
0.0
-I
D
Drain Current (A)
-V
SD
Source-Drain Voltage (V)
0.2
0.4
0.6
0.8
1.0
1.2
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
ISSUE 2 - MAY 2007
5
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