ZXMP3A17E6
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
Max R
DS(ON)
70m @ V
GS
= -10V
Max I
D
T
A
= +25C
(Note 6)
-4A
Features and Benefits
Low On-Resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
-30V
Description and Applications
This new generation of TRENCH MOSFETs from Zetex utilizes a
unique structure that combines the benefits of low on-resistance with
fast switching speed. This makes them ideal for high efficiency, low
voltage, power management applications.
DC - DC Converters
Power Management Functions
Disconnect Switches
Motor Control
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.016 grams (Approximate)
D
SOT26
D
1
D
2
G
3
6
5
4
D
D
S
G
S
Top View
Pin-Out (Top View)
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
ZXMP3A17E6TA
ZXMP3A17E6TC
Notes:
Marking
317
317
Reel Size (inch)
7
13
Tape Width (mm)
8
8
Quantity Per Reel
3000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
317
317 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2015
C
Jan
1
Feb
2
2016
D
Mar
3
2017
E
Apr
4
May
5
YM
2018
F
Jun
6
2019
G
Jul
7
Aug
8
2020
H
Sep
9
2021
I
Oct
O
Nov
N
2022
J
Dec
D
March 2015
© Diodes Incorporated
ZXMP3A17E6
Datasheet Number: DS33578 Rev. 3 - 2
1 of 7
www.diodes.com
ZXMP3A17E6
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
GS
= -10V
T
A
= +25C (Note 6)
T
A
= +70C (Note 6)
T
A
= +25C (Note 5)
Symbol
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
Value
-30
20
-4.0
-3.2
-3.2
-14.4
-2.5
-14.4
Unit
V
V
A
A
A
A
NEW PRODUCT
Pulsed Drain Current (Note 7)
Continuous Source Current (Body Diode)
(Note 6)
Pulsed Source Current (Body Diode)
(Note 7)
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Power Dissipation at T
A
= +25C (Note 5)
Linear derating factor
Power Dissipation at T
A
= +25C (Note 6)
Linear Derating Factor
Junction to Ambient (Note 5)
Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
P
D
P
D
R
JA
R
JA
T
J
, T
STG
Value
1.1
8.8
1.7
13.6
113
73
-55 to +150
Unit
W
mW/C
W
mW/C
C/W
C/W
C
Notes: 5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR-4 PCB measured at t≦5 secs.
7. Repetitive rating 25mm x 25mm FR-4 PCB, D = 0.05, pulse width 10µs - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (Note 8)
Forward Transconductance (Notes 8 &10)
Diode Forward Voltage (Note 8)
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 10)
Output Capacitance (Note 10)
Reverse Transfer Capacitance (Note 10)
Gate Charge (Notes 9 &10)
Total Gate Charge (Notes 9 &10)
Gate-Source Charge (Notes 9 &10)
Gate-Drain Charge (Notes 9 &10)
Turn-On Delay Time (Notes 9 &10)
Turn-On Rise Time (Notes 9 &10)
Turn-Off Delay Time (Notes 9 &10)
Turn-Off Fall Time (Notes 9 &10)
Reverse Recovery Time
(
Note 10)
Reverse Recovery Charge
(
Note 10)
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
g
fs
V
SD
C
iss
C
oss
C
rss
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
-30
-
-
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
6.4
-0.85
630
113
78
8.28
15.8
1.84
2.8
1.74
2.87
29.2
8.72
19.5
16.3
Max
-
-0.5
100
-
0.070
0.110
-
-1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
A
nA
V
Ω
S
V
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
I
D
= -250A, V
GS
= 0V
V
DS
= -30V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
I
D
= -250A, V
DS
= V
GS
V
GS
= -10V, I
D
=-3.2A
V
GS
= -4.5V, I
D
=-2.5A
V
DS
= -15V, I
D
=-3.2A
T
J
= +25°
, I
S
= -2.5A, V
GS
= 0V
C
V
DS
= -15V, V
GS
= 0V
f = 1MHz
V
GS
= -5V, V
DS
= -15V
I
D
= -3.2A
V
GS
= -10V, V
DS
= -15V
I
D
= -3.2A
V
DD
= -15V, V
GS
= -10V
I
D
= -1A, R
G
= 6.0
T
J
= +25° I
F
=-1.7A,
C,
di/dt= 100A/μs
Notes: 8. Measured under pulsed conditions. Width=300μs. Duty cycle ≤ 2%
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
ZXMP3A17E6
Datasheet Number: DS33578 Rev. 3 - 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated
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