ZXMP3F30FH
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
-30V
R
DS(on) max
80mΩ@ V
GS
= -10V
140mΩ@ V
GS
=-4.5V
I
D
T
A
= +25°C
-4.0A
⎯
Features and Benefits
•
•
•
•
•
•
•
Low On-Resistance
Fast Switching Speed
4.5V Gate Drive Capability
Thermally Enhanced SOT23 package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
Description
This new generation Trench MOSFET has been designed to minimize
the on-state resistance (R
DS(ON)
) and yet maintain superior switching
performance.
Mechanical Data
•
•
•
•
•
•
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
⎯
Matte Tin annealed over Copper leadframe
Solderable per MIL-STD-202, Method 208
e3
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Applications
•
•
•
Power management functions
Portable Equipment
Battery Charging
SOT23
D
D
G
G
S
S
Top View
Pin Configuration
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
ZXMP3F30FHTA
Notes:
Compliance
Standard
Case
SOT23
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free,
"Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
KPA = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
DMB
KPA
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
Feb
2
2009
W
Mar
3
YM
2010
X
Apr
4
May
5
2011
Y
Jun
6
2012
Z
Jul
7
Aug
8
2013
A
Sep
9
2014
B
Oct
O
Nov
N
2015
C
Dec
D
ZXMP3F30FH
Document number: DS33579 Rev. 2 - 2
1 of 7
www.diodes.com
February 2014
© Diodes Incorporated
ZXMP3F30FH
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
= -10V
T
A
= +25°C (Note 6)
T
A
= +70°C (Note 6)
T
A
= +25°C (Note 5)
T
L
= +25°C (Note 8)
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
I
SM
Value
-30
±20
-3.4
-2.7
-2.8
-4.0
-15.3
-2
-15.3
Units
V
V
A
A
A
A
NEW PRODUCT
Pulsed Drain Current (Note 7)
Continuous Source Current (Body Diode) (Note 6)
Pulsed Source Current (Body Diode) (Note 7)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
T
A
= +25°C (Note 5)
Value
0.95
7.6
1.4
11.2
1.96
15.7
131
89
-55 to +150
Units
W
mW/°C
W
mW/°C
W
mW/°C
°C/W
°C
Characteristic
Total Power Dissipation (Note 5)
Linear Derating Factor
T
A
= +25°C (Note 6)
T
L
= +25°C (Note 8)
P
D
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 5)
(Note 6)
R
θ
JA
T
J,
T
STG
ZXMP3F30FH
Document number: DS33579 Rev. 2 - 2
2 of 7
www.diodes.com
February 2014
© Diodes Incorporated
ZXMP3F30FH
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 9)
Symbol
BV
DSS
Min
-30
⎯
⎯
-1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
5
-0.8
370
72
38
7
1.2
1.3
1.3
2.6
49
22
14.6
9.5
Max
⎯
-1
±100
-3
80
140
⎯
-1.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
nA
nA
V
mΩ
S
V
pF
pF
pF
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -30V, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -2.5A
V
GS
= -4.5V, I
D
= -1.9A
V
DS
= -15V, I
D
= -3A
V
GS
= 0V, I
S
= -1.7A
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
NEW PRODUCT
Forward Transconductance (Note 9 & 10)
g
fs
Diode Forward Voltage (Note 9)
V
SD
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
Output Capacitance
C
oss
Reverse Transfer Capacitance
C
rss
GATE CHARACTERISTICS
Total Gate Charge
Qg
Gate-Source Charge
Q
gs
Gate-Drain Charge
Q
gd
SWITCHING CHARACTERISTICS (Note 10 & 11)
Turn-On Delay Time
t
d(on)
Rise Time
t
r
Turn-On Delay Time
t
d(off)
Rise Time
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS (Note 11)
Reverse Recovery Time
t
rr
Reverse Recovery Charge
Q
rr
Notes:
nC
V
DS
= -15V, V
GS
= -10V,
I
D
= -3A
ns
V
DS
= -15V, V
GS
= -10V,
I
D
= -1A, R
G
= 6.0Ω
ns
nC
IS= -1.5A,di/dt=100A/μs
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. Mounted on FR4 PCB measured at t
≤10
sec.
7. Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300μs – pulse width limited by maximum junction temperature.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
9. Measured under pulsed conditions. Pulse width
≤
300μs; duty cycle
≤
2%.
10. Switching characteristics are independent of operating junction temperature.
11. For design aid only, not subject to production testing.
ZXMP3F30FH
Document number: DS33579 Rev. 2 - 2
3 of 7
www.diodes.com
February 2014
© Diodes Incorporated
ZXMP3F30FH
Typical Characteristics
NEW PRODUCT
ZXMP3F30FH
Document number: DS33579 Rev. 2 - 2
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February 2014
© Diodes Incorporated
ZXMP3F30FH
Test Circuits
NEW PRODUCT
ZXMP3F30FH
Document number: DS33579 Rev. 2 - 2
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February 2014
© Diodes Incorporated
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