Green
ZXMP6A16DN8
DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
R
DS(ON)
Max
85mΩ @ V
GS
= -10V
-60V
125mΩ @ V
GS
= -4.5V
SO-8
-3.2A
Package
I
D
T
A
= +25°C
(Notes 4 & 6)
-3.9A
Features
Low On-Resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Low Profile SOIC Package
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (ZXMP6A16DN8Q)
Description
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Disconnect Switches
Motor Control
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
SO-8
S1
D1
D1
D2
G1
S2
D1
D2
G1
S1
G2
S2
Equivalent Circuit
G2
Top View
Top View
D2
Ordering Information
(Note 4)
Part Number
ZXMP6A16DN8TA
ZXMP6A16DN8TC
Notes:
Case
SO-8
SO-8
Packaging
500/Tape & Reel
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZXMP6A16D = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 - 53)
ZXMP6A16DN8
Document number: DS33586 Rev. 5 - 2
1 of 8
www.diodes.com
June 2016
© Diodes Incorporated
ZXMP6A16DN8
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
(Note 5)
(Notes 7 & 9)
T
A
= +70°C
(Notes 7 & 9)
(Notes 6 & 9)
(Notes 8 & 9)
(Notes 7 & 9)
(Notes 8 & 9)
Symbol
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
Value
-60
20
-3.9
-3.1
-2.9
-18.3
-3.2
-18.3
Unit
V
V
Continuous Drain Current
V
GS
= 10V
A
Pulsed Drain Current
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
A
A
A
Thermal Characteristics
Characteristic
(Notes 6 & 9)
Power Dissipation
Linear Derating Factor
(Notes 6 & 10)
(Notes 7 & 9)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Notes:
Symbol
P
D
(Notes 6 & 9)
(Notes 6 & 10)
(Notes 7 & 9)
(Notes 9 & 11)
R
θJA
R
θJL
T
J
, T
STG
Value
1.25
10.0
1.81
14.5
2.15
17
100
70
60
48.85
-55 to +150
Unit
W
mW/°C
°C/W
°C
5. AEC-Q101 V
GS
maximum is
16V.
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as Note (5), except the device is measured at t
10 sec.
8. Same as Note (5), except the device is pulsed with D = 0.02 and pulse width 300µs.
9. For a dual device with one active die.
10. For a device with two active die running at equal power.
11. Thermal resistance from junction to solder-point.
ZXMP6A16DN8
Document number: DS33586 Rev. 5 - 2
2 of 8
www.diodes.com
June 2016
© Diodes Incorporated
ZXMP6A16DN8
Thermal Characteristics
(Continued)
-I
D
Drain Current (A)
10
R
DS(on)
Limited
Max Power Dissipation (W)
1
DC
1s
100ms
Single Pulse
T
amb
=25°C
One active die
10ms
1ms
100µs
100m
10m
100m
1
10
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Two active die
One active die
-V
DS
Drain-Source Voltage (V)
0
20
40
60
80
100 120 140 160
Temperature (°C)
Safe Operating Area
Thermal Resistance (°C/W)
110
T
amb
=25°C
100
One active die
90
80
70
60
D=0.5
50
40
Single Pulse
D=0.2
30
20
D=0.05
10
D=0.1
0
100µ 1m 10m 100m 1
10
100
1k
Derating Curve
Maximum Power (W)
100
Single Pulse
T
amb
=25°C
One active die
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZXMP6A16DN8
Document number: DS33586 Rev. 5 - 2
3 of 8
www.diodes.com
June 2016
© Diodes Incorporated
ZXMP6A16DN8
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
g
FS
V
SD
t
RR
Q
RR
C
ISS
C
OSS
C
RSS
Q
G
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
t
D(OFF)
t
F
Min
-60
-1.0
Typ
7.2
-0.85
29.2
39.6
1,021
83.1
56.4
12.1
24.2
2.5
3.7
3.5
4.1
35
10
Max
-1.0
100
85
125
-0.95
Unit
V
µA
nA
V
mΩ
S
V
ns
nC
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
V
DD
= -30V, V
GS
= -10V,
I
D
= -1A, R
G
6.0Ω
V
DS
= -30V, V
GS
= 0V,
f = 1MHz
V
GS
= -5V
V
GS
= -10V
V
DS
= -30V,
I
D
= -2.9A
Test Condition
I
D
= -250µA, V
GS
= 0V
V
DS
= -60V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
I
D
= -250µA, V
DS
= V
GS
V
GS
= -10V, I
D
= -2.9A
V
GS
= -4.5V, I
D
= -2.4A
V
DS
= -15V, I
D
= -2.9A
I
S
= -3.4A, V
GS
= 0V, T
J
= +25°C
I
S
= -2A, di/dt = 100A/µs,
T
J
= +25°C
Static Drain-Source On-Resistance (Note 12)
Forward Transconductance (Notes 12 & 13)
Diode Forward Voltage (Note 12)
Reverse Recovery Time (Note 13)
Reverse Recovery Charge (Note 13)
DYNAMIC CHARACTERISTICS
(Note 14)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
12. Measured under pulsed conditions. Pulse width
300µs; duty cycle
2%
13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.
ZXMP6A16DN8
Document number: DS33586 Rev. 5 - 2
4 of 8
www.diodes.com
June 2016
© Diodes Incorporated
ZXMP6A16DN8
Typical Characteristics
T = 25°C
10V
5V
-I
D
Drain Current (A)
-I
D
Drain Current (A)
10
4.5V
4V
3.5V
3V
T = 150°C
10V
5V
4V
3.5V
3V
10
1
2.5V
-V
GS
1
2.5V
-V
GS
0.1
2V
0.1
0.1
-V
DS
Drain-Source Voltage (V)
1
10
0.01
0.1
-V
DS
Drain-Source Voltage (V)
1
10
Output Characteristics
1.8
and V
GS(th)
Normalised R
DS(on)
Output Characteristics
V
GS
= -10V
I
D
= - 2.9A
R
DS(on)
V
GS(th)
V
GS
= V
DS
I
D
= -250uA
-I
D
Drain Current (A)
10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
1
T = 150°C
T = 25°C
-V
DS
= 10V
0.1
2
3
4
50
100
150
-V
GS
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance
2.5V
-V
GS
3V
3.5V
T = 25°C
Normalised Curves v Temperature
-I
SD
Reverse Drain Current (A)
10
10
T = 150°C
1
4V
4.5V
5V
1
T = 25°C
0.1
0.1
0.1
1
10
10V
0.01
0.4
On-Resistance v Drain Current
-I
D
Drain Current (A)
-V
SD
Source-Drain Voltage (V)
0.6
0.8
1.0
1.2
Source-Drain Diode Forward Voltage
ZXMP6A16DN8
Document number: DS33586 Rev. 5 - 2
5 of 8
www.diodes.com
June 2016
© Diodes Incorporated
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